Infineon Technologies IKW50N60DTPXKSA1
- Part Number:
- IKW50N60DTPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494337-IKW50N60DTPXKSA1
- Description:
- IGBT 600V 80A 319.2W TO247
- ECAD Model:
-
- Datasheet:
- IKW50N60DTPXKSA1
Infineon Technologies IKW50N60DTPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW50N60DTPXKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop™
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation319.2W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Input TypeStandard
- Power - Max319.2W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current80A
- Reverse Recovery Time115 ns
- Collector Emitter Breakdown Voltage600V
- Turn On Time55 ns
- Test Condition400V, 50A, 7 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 50A
- Turn Off Time-Nom (toff)332 ns
- IGBT TypeTrench Field Stop
- Gate Charge249nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C20ns/215ns
- Switching Energy1.53mJ (on), 850μJ (off)
- RoHS StatusROHS3 Compliant
IKW50N60DTPXKSA1 Description
IKW50N60DTPXKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, temperature-stable behavior, very low VCEsat, and easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, IKW50N60DTPXKSA1 IGBT is well suited for a wide range of applications, including resonant converters, inverterized microwave ovens, and more.
IKW50N60DTPXKSA1 Features
High ruggedness Temperature stable behavior Very low VCEsat Easy parallel switching capability Low EMI
IKW50N60DTPXKSA1 Applications
Inductive cooking Inverterized microwave ovens Resonant converters Soft switching applications
IKW50N60DTPXKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, temperature-stable behavior, very low VCEsat, and easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, IKW50N60DTPXKSA1 IGBT is well suited for a wide range of applications, including resonant converters, inverterized microwave ovens, and more.
IKW50N60DTPXKSA1 Features
High ruggedness Temperature stable behavior Very low VCEsat Easy parallel switching capability Low EMI
IKW50N60DTPXKSA1 Applications
Inductive cooking Inverterized microwave ovens Resonant converters Soft switching applications
IKW50N60DTPXKSA1 More Descriptions
IKW50N60DTP Series 600 V 80 A Through Hole Trench Field Stop IGBT - PG-TO247-3
600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Igbt, Single, 600V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:319.2W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW50N60DTPXKSA1
The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Summary of Features: Lower total switching losses (E ts) i.e. better efficiency IGBT 7% lower E ts for switching speed of 8kHz 11% lower E ts for switching speed of 15kHz; Low speed dV/dt switching (<5V/ns); Low EMI; Improved cell design for higher reliability | Target Applications: Motor control; Air conditioning compressors; HVAC motor drives; UPS; Solar power converters
600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Igbt, Single, 600V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:319.2W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW50N60DTPXKSA1
The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Summary of Features: Lower total switching losses (E ts) i.e. better efficiency IGBT 7% lower E ts for switching speed of 8kHz 11% lower E ts for switching speed of 15kHz; Low speed dV/dt switching (<5V/ns); Low EMI; Improved cell design for higher reliability | Target Applications: Motor control; Air conditioning compressors; HVAC motor drives; UPS; Solar power converters
The three parts on the right have similar specifications to IKW50N60DTPXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusNumber of PinsPin CountElement ConfigurationRadiation HardeningLead FreeCase ConnectionHalogen FreeView Compare
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IKW50N60DTPXKSA116 WeeksThrough HoleThrough HoleTO-247-3SILICON-40°C~175°C TJTubeTrenchStop™2016e3yesActiveNot Applicable3EAR99Tin (Sn)319.2WSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODEStandard319.2WPOWER CONTROLN-CHANNEL1.8V80A115 ns600V55 ns400V, 50A, 7 Ω, 15V1.8V @ 15V, 50A332 nsTrench Field Stop249nC150A20ns/215ns1.53mJ (on), 850μJ (off)ROHS3 Compliant-------- -
16 WeeksThrough HoleThrough HoleTO-247-3SILICON-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)333W----1-Standard333WPOWER CONTROLN-CHANNEL600V100A130 ns600V54 ns400V, 50A, 7 Ω, 15V2.3V @ 15V, 50A297 nsTrench Field Stop315nC200A23ns/235ns2.36mJROHS3 Compliant33SingleNoLead Free--
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26 WeeksThrough HoleThrough HoleTO-247-3SILICON-40°C~175°C TJTubeTrenchStop™2003e3yesActive1 (Unlimited)3EAR99Tin (Sn)275W-NOT SPECIFIEDNOT SPECIFIED-1-Standard275WPOWER CONTROLN-CHANNEL650V80A81 ns650V54 ns400V, 50A, 12 Ω, 15V2.1V @ 15V, 50A220 nsTrench120nC200A25ns/172ns1.5mJ (on), 500μJ (off)ROHS3 Compliant3-Single-Lead FreeCOLLECTORHalogen Free
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26 WeeksThrough HoleThrough HoleTO-247-3SILICON-40°C~175°C TJTubeTrenchStop™2003-yesActive1 (Unlimited)3--274W-NOT SPECIFIEDNOT SPECIFIED-1-Standard274WPOWER CONTROLN-CHANNEL650V80A70 ns650V45 ns400V, 50A, 8.2 Ω, 15V1.7V @ 15V, 50A198 nsTrench120nC200A20ns/127ns1.23mJ (on), 550μJ (off)ROHS3 Compliant3-Single-Lead FreeCOLLECTORHalogen Free
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