Infineon Technologies IKP20N60T
- Part Number:
- IKP20N60T
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3072004-IKP20N60T
- Description:
- IGBT 600V 40A 166W TO220-3
- Datasheet:
- IKP20N60T
Infineon Technologies IKP20N60T technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKP20N60T.
- Surface MountNO
- Number of Terminals3
- Transistor Element MaterialSILICON
- Pbfree Codeicon-pbfree yes
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Terminal PositionSINGLE
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-220AB
- Power Dissipation-Max (Abs)166W
- Turn On Time36 ns
- Collector Current-Max (IC)40A
- Turn Off Time-Nom (toff)299 ns
- Collector-Emitter Voltage-Max600V
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.7V
- RoHS StatusRoHS Compliant
IKP20N60T Description
Due to the combination of trench-cell and fieldstop concepts, hard-switching 600 V, 20 A TRENCHSTOPTM IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package results in significant improvement of the static and dynamic performance of the device. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.
IKP20N60T Features
Low EMI
Low Gate Charge
Very low VCE(sat) 1.5V (Typ.)
Short circuit withstand time 5μs
Pb-free lead plating; RoHS compliant
Maximum Junction Temperature 175°C
Positive temperature coefficient in VCE(sat)
Qualified according to JEDEC1 for target applications
Very soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKP20N60T Applications
Welding
Solar Inverters
Air conditioning
Industrial Drives
Major Home Appliances
Other hard switching applications
Uninterruptible Power Supply (UPS)
Due to the combination of trench-cell and fieldstop concepts, hard-switching 600 V, 20 A TRENCHSTOPTM IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package results in significant improvement of the static and dynamic performance of the device. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.
IKP20N60T Features
Low EMI
Low Gate Charge
Very low VCE(sat) 1.5V (Typ.)
Short circuit withstand time 5μs
Pb-free lead plating; RoHS compliant
Maximum Junction Temperature 175°C
Positive temperature coefficient in VCE(sat)
Qualified according to JEDEC1 for target applications
Very soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKP20N60T Applications
Welding
Solar Inverters
Air conditioning
Industrial Drives
Major Home Appliances
Other hard switching applications
Uninterruptible Power Supply (UPS)
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