IKP20N60T

Infineon Technologies IKP20N60T

Part Number:
IKP20N60T
Manufacturer:
Infineon Technologies
Ventron No:
3072004-IKP20N60T
Description:
IGBT 600V 40A 166W TO220-3
ECAD Model:
Datasheet:
IKP20N60T

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Specifications
Infineon Technologies IKP20N60T technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKP20N60T.
  • Surface Mount
    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Pbfree Code
    icon-pbfree yes
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Terminal Form
    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    175°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Power Dissipation-Max (Abs)
    166W
  • Turn On Time
    36 ns
  • Collector Current-Max (IC)
    40A
  • Turn Off Time-Nom (toff)
    299 ns
  • Collector-Emitter Voltage-Max
    600V
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.7V
  • RoHS Status
    RoHS Compliant
Description
IKP20N60T Description
Due to the combination of trench-cell and fieldstop concepts, hard-switching 600 V, 20 A TRENCHSTOPTM IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package results in significant improvement of the static and dynamic performance of the device. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.

IKP20N60T Features
Low EMI
Low Gate Charge
Very low VCE(sat) 1.5V (Typ.)
Short circuit withstand time 5μs
Pb-free lead plating; RoHS compliant
Maximum Junction Temperature 175°C
Positive temperature coefficient in VCE(sat)
Qualified according to JEDEC1 for target applications
Very soft, fast recovery anti-parallel Emitter Controlled HE diode.

IKP20N60T Applications
Welding
Solar Inverters
Air conditioning
Industrial Drives
Major Home Appliances
Other hard switching applications
Uninterruptible Power Supply (UPS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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