Infineon Technologies IKP20N65H5XKSA1

Trans IGBT Chip N-CH 650V 42A 125000mW Automotive 3-Pin(3 Tab) TO-220 Tube
Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB
650 V, 20 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHSInfineon SCT
Igbt, Single, 650V, 42A, To-220; Dc Collector Current:42A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:125W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKP20N65H5XKSA1
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding