Infineon Technologies IKD15N60RATMA1
- Part Number:
- IKD15N60RATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854542-IKD15N60RATMA1
- Description:
- IGBT 600V 30A 250W TO252
- Datasheet:
- IKD15N60RATMA1
Infineon Technologies IKD15N60RATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKD15N60RATMA1.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchStop™
- Published2013
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max250W
- Transistor ApplicationPOWER CONTROL
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current30A
- Reverse Recovery Time110 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time26 ns
- Test Condition400V, 15A, 15 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A
- Turn Off Time-Nom (toff)430 ns
- IGBT TypeTrench Field Stop
- Gate Charge90nC
- Current - Collector Pulsed (Icm)45A
- Td (on/off) @ 25°C16ns/183ns
- Switching Energy370μJ (on), 530μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.7V
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IKD15N60RATMA1 Description
IKD15N60RATMA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 400V. The operating temperature of IKD15N60RATMA1 is -55°C~175°C TJ and its Current - Collector (Ic) (Max) is 10A. IKD15N60RATMA1 has 3 pins and it is available in Die packaging way. The Voltage - Collector Emitter Breakdown (Max) of IKD15N60RATMA1 is 600V.
IKD15N60RATMA1 Features
Optimised VCEs at and VF for low conduction losses
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
Operating range of 1to20 kHz
Maximum junction temperature 175°C
Short circuit capability of 5μs
IKD15N60RATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IKD15N60RATMA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 400V. The operating temperature of IKD15N60RATMA1 is -55°C~175°C TJ and its Current - Collector (Ic) (Max) is 10A. IKD15N60RATMA1 has 3 pins and it is available in Die packaging way. The Voltage - Collector Emitter Breakdown (Max) of IKD15N60RATMA1 is 600V.
IKD15N60RATMA1 Features
Optimised VCEs at and VF for low conduction losses
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
Operating range of 1to20 kHz
Maximum junction temperature 175°C
Short circuit capability of 5μs
IKD15N60RATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IKD15N60RATMA1 More Descriptions
Trans IGBT Chip N-CH 600V 30A 250000mW Automotive 3-Pin(2 Tab) DPAK T/R
Igbt, 600V, 30A, 175Deg C, 250W Rohs Compliant: Yes |Infineon IKD15N60RATMA1
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 2.2pF 50volts C0G /-0.1pF
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market, PG-TO252-3, RoHSInfineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon
Igbt, 600V, 30A, 175Deg C, 250W Rohs Compliant: Yes |Infineon IKD15N60RATMA1
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 2.2pF 50volts C0G /-0.1pF
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market, PG-TO252-3, RoHSInfineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps; Fans; Home appliance; Industrial drives; Aircon
The three parts on the right have similar specifications to IKD15N60RATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusLead FreeTerminal PositionConfigurationCase ConnectionSurface MountBase Part NumberVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)View Compare
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IKD15N60RATMA116 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-40°C~175°C TJTape & Reel (TR)TrenchStop™2013e3noActive1 (Unlimited)2EAR99Tin (Sn)Insulated Gate BIP Transistors250WGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SingleStandard250WPOWER CONTROLHalogen FreeN-CHANNEL2.1V30A110 ns600V600V26 ns400V, 15A, 15 Ω, 15V2.1V @ 15V, 15A430 nsTrench Field Stop90nC45A16ns/183ns370μJ (on), 530μJ (off)20V5.7VROHS3 CompliantContains Lead---------
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-40°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchStop™2014-yesNot For New Designs1 (Unlimited)2---150WGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2-1-Standard150WPOWER CONTROLHalogen FreeN-CHANNEL600V20A72 ns600V-27 ns400V, 10A, 26 Ω, 15V2.5V @ 15V, 10A198 nsTrench64nC30A12ns/168ns190μJ (on), 160μJ (off)--ROHS3 CompliantContains LeadSINGLESINGLE WITH BUILT-IN DIODECOLLECTOR-----
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-40°C~175°C TJCut Tape (CT)TrenchStop®2011e3yesObsolete1 (Unlimited)2EAR99Tin (Sn)Insulated Gate BIP Transistors-GULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED3R-PSSO-G2Not Qualified1-Standard150WPOWER CONTROL-N-CHANNEL--62ns--24 ns400V, 10A, 23 Ω, 15V2.1V @ 15V, 10A428 nsTrench64nC30A14ns/192ns590μJ20V5.7VRoHS Compliant-SINGLESINGLE WITH BUILT-IN DIODECOLLECTORYES*KD10N60600V20A150W
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-40°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchStop™2006-yesNot For New Designs1 (Unlimited)2---240WGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2-1-Standard240WPOWER CONTROLHalogen FreeN-CHANNEL600V30A74 ns600V-30 ns400V, 15A, 15 Ω, 15V2.5V @ 15V, 15A193 nsTrench90nC45A13ns/160ns270μJ (on), 250μJ (off)--ROHS3 CompliantContains LeadSINGLESINGLE WITH BUILT-IN DIODECOLLECTOR-----
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