Infineon Technologies IGW40N65H5FKSA1
- Part Number:
- IGW40N65H5FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854504-IGW40N65H5FKSA1
- Description:
- IGBT 650V 74A 255W PG-TO247-3
- Datasheet:
- IGW40N65H5FKSA1
Infineon Technologies IGW40N65H5FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IGW40N65H5FKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation255W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Power Dissipation255W
- Input TypeStandard
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.65V
- Max Collector Current74A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 20A, 15 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
- Gate Charge95nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C22ns/165ns
- Switching Energy390μJ (on), 120μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max4.8V
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IGW40N65H5FKSA1 Description
IGBT with high speed in TRENCHSTOPTM 5 technology
IGW40N65H5FKSA1 Features
Breakdown voltage of 650V
Quadratic gate charge
175°C is the maximum junction temperature
IGW40N65H5FKSA1 Applications
Solar power converters
Supplies of uninterrupted power
Converters for welding
Switching frequency converters with a mid-to-high frequency range
IGBT with high speed in TRENCHSTOPTM 5 technology
IGW40N65H5FKSA1 Features
Breakdown voltage of 650V
Quadratic gate charge
175°C is the maximum junction temperature
IGW40N65H5FKSA1 Applications
Solar power converters
Supplies of uninterrupted power
Converters for welding
Switching frequency converters with a mid-to-high frequency range
IGW40N65H5FKSA1 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.8pF 25volts C0G /-0.5pF
IGW40N65H5 Series 650 V 74 A Through Hole IGBT TrenchStop - PG-TO-247-3
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHSInfineon SCT
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
IGW40N65H5 Series 650 V 74 A Through Hole IGBT TrenchStop - PG-TO-247-3
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHSInfineon SCT
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
The three parts on the right have similar specifications to IGW40N65H5FKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationPower DissipationInput TypePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRoHS StatusLead FreeSurface MountTransistor Element MaterialNumber of TerminationsTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower - MaxTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTurn Off Time-Nom (toff)IGBT TypeWeightPin CountQualification StatusHalogen FreeView Compare
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IGW40N65H5FKSA116 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)EAR99Tin (Sn)Insulated Gate BIP Transistors255WNOT SPECIFIEDNOT SPECIFIEDSingle255WStandardN-CHANNEL1.65V74A650V1.6V400V, 20A, 15 Ω, 15V2.1V @ 15V, 40A95nC120A22ns/165ns390μJ (on), 120μJ (off)20V4.8VUnknownROHS3 CompliantLead Free-------------------
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---PG-TO247-3--Tube-packed-----------------------------RoHS Compliant-------------------
-
14 Weeks-Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop™2016e3yesActiveNot ApplicableEAR99Tin (Sn)--NOT SPECIFIEDNOT SPECIFIED--StandardN-CHANNEL----400V, 40A, 10.1 Ω, 15V1.8V @ 15V, 40A177nC120A18ns/222ns1.06mJ (on), 610μJ (off)---ROHS3 Compliant-NOSILICON3SINGLER-PSFM-T31SINGLE WITH BUILT-IN DIODE246WPOWER CONTROL600V67A49 ns320 nsTrench Field Stop----
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16 Weeks-Through HoleTO-247-33-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)EAR99Tin (Sn)-306WNOT SPECIFIEDNOT SPECIFIEDSingle-StandardN-CHANNEL600V80A600V1.95V400V, 40A, 7.9 Ω, 15V2.4V @ 15V, 40A223nC160A19ns/197ns1.68mJ--No SVHCROHS3 Compliant-NOSILICON3--1-306WPOWER CONTROL--48 ns249 nsTrench Field Stop6.500007g3Not QualifiedNot Halogen Free
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