HRF3205

Fairchild/ON Semiconductor HRF3205

Part Number:
HRF3205
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2488780-HRF3205
Description:
MOSFET N-CH 55V 100A TO-220AB
ECAD Model:
Datasheet:
HRF3205, HRF3205S TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor HRF3205 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HRF3205.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    100A
  • Number of Elements
    1
  • Power Dissipation-Max
    175W Tc
  • Element Configuration
    Single
  • Power Dissipation
    175W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8mOhm @ 59A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time
    100ns
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    70 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Input Capacitance
    4nF
  • Drain to Source Resistance
    8mOhm
  • Rds On Max
    8 mΩ
  • Nominal Vgs
    4 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
HRF3205 Description 
HRF3205 are silicon gate power field effect transistors with an N-Channel enhancement mode. They're high-performance power MOSFETs that have been designed, tested, and guaranteed to withstand a certain amount of energy in the breakdown avalanche mode. All of these power MOSFETs are intended for use in switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors with low gate drive power. Integrated circuits can be used to operate these sorts.
HRF3205 Features
? 100A, 55V (See Note) ? rDS(ON) = 0.008 ? Low On-Resistance ? PSPICE? Model with Temperature Compensation ? SPICE Model for Thermal Impedance ? Curve of UIS Ratings ? Additional Reading "Guidelines for Soldering Surface Mount Components to PC Boards," TB334.
HRF3205 Applications
Switching regulators Switching converters Motor drivers Relay drivers
HRF3205 More Descriptions
Trans MOSFET N-CH 55V 100A 3-Pin (3 Tab) TO-220AB Rail
TO-220AB PWR MOS ULTRAFET 55V/59A/0.008 OHM N-CHANNEL
55V,100A,0.008 OHM,NCH,POWER TRENCH
@ C2843 LD PLASTIC W/EXPOSED GPP SMA 1.0A 50V ROHS 5KHRF3205 - 100A, 55V, 0.008OHM, N
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:100A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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