Fairchild/ON Semiconductor HGTP12N60C3D

Name: HGTP12N60C3D
Brand: Fairchild/ON Semiconductor
SKU: 2854866-HGTP12N60C3D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTP12N60C3D

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2854866-HGTP12N60C3D

Description:: IGBT 600V 24A 104W TO220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HGTP12N60C3D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTP12N60C3D.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
5 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
104W
Current Rating
24A
Base Part Number
HGTP12N60
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
104W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
28 μs
Transistor Application
MOTOR CONTROL
Turn-Off Delay Time
270 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
24A
Reverse Recovery Time
40 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Turn On Time
48 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Turn Off Time-Nom (toff)
480 ns
Gate Charge
48nC
Current - Collector Pulsed (Icm)
96A
Switching Energy
380μJ (on), 900μJ (off)
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The HGTP12N60C3D is a 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. The device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly. The TA49123 development type IGBT was used. The TA49188 development type diode is utilized in anti-parallel with the IGBT. The IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses. Previously known as Developmental Type TA49182.

Features
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
24A, 600V at TC=25°C
Typical Fall Time at TJ=150°C...210ns

Applications
SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
UPS (Uninterruptible Power Supply) system.
AC and DC motor drive offering speed control.
Chopper and inverters.
Solar inverters.

HGTP12N60C3D More Descriptions

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3 Tab) TO-220AB Rail
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.

Product Comparison

The three parts on the right have similar specifications to HGTP12N60C3D.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Switching Energy

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Test Condition

Td (on/off) @ 25°C

View Compare
HGTP12N60C3D

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

5 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-40°C~150°C TJ

Tube

2011

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

600V

104W

24A

HGTP12N60

1

NPN

Single

104W

COLLECTOR

Standard

28 μs

MOTOR CONTROL

270 ns

600V

24A

40 ns

TO-220AB

600V

1.65V

48 ns

2.2V @ 15V, 15A

480 ns

48nC

96A

380μJ (on), 900μJ (off)

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
HGTP12N60A4

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

HGTP12N60

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

-

-

2.7V @ 15V, 12A

-

78nC

96A

55μJ (on), 50μJ (off)

-

-

-

-

compliant

167W

600V

54A

390V, 12A, 10 Ω, 15V

17ns/96ns

HGTP12N60C3D vs HGTP12N60A4
HGTP7N60B3D

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3

3

1.8g

-

-55°C~150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

600V

60W

14A

HGTP7N60

-

-

Single

60W

-

Standard

-

-

-

600V

14A

37ns

-

600V

1.8V

-

2.1V @ 15V, 7A

-

23nC

56A

160μJ (on), 120μJ (off)

-

-

RoHS Compliant

Lead Free

-

-

-

-

480V, 7A, 50 Ω, 15V

26ns/130ns

HGTP12N60C3D vs HGTP7N60B3D
HGTP7N60A4D

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

HGTP7N60

-

-

-

-

-

Standard

-

-

-

-

-

34ns

-

-

-

-

2.7V @ 15V, 7A

-

37nC

56A

55μJ (on), 60μJ (off)

-

-

-

-

compliant

125W

600V

34A

390V, 7A, 25 Ω, 15V

11ns/100ns

HGTP12N60C3D vs HGTP7N60A4D