Diodes Incorporated FZT855TA
- Part Number:
- FZT855TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585091-FZT855TA
- Description:
- TRANS NPN 150V 5A SOT-223
- Datasheet:
- FZT855TA
Diodes Incorporated FZT855TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT855TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC150V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Frequency90MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT855
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product90MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic355mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage150V
- Transition Frequency90MHz
- Collector Emitter Saturation Voltage355mV
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)250V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT855TA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 355mV.A VCE saturation (Max) of 355mV @ 500mA, 5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 90MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 5A volts is possible.
FZT855TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 90MHz
FZT855TA Applications
There are a lot of Diodes Incorporated
FZT855TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 355mV.A VCE saturation (Max) of 355mV @ 500mA, 5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 90MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 5A volts is possible.
FZT855TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 90MHz
FZT855TA Applications
There are a lot of Diodes Incorporated
FZT855TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT855TA More Descriptions
Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 150V 5A 24000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
150V 3W 100@1A,5V 5A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT855 Series NPN 5 A 150 V SMT Silicon High Performance Transistor - SOT-223
NPN high current transistor, FZT855TA | Diodes Inc FZT855TA
NPN TRANSISTOR 150V 5A 3WSOT223
Transistor,NPN,150V,5A,SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency ft:90MHz; Power Dissipation
TRANSISTOR,NPN,150V,5A,SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 180V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 3W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Gain Bandwidth ft Typ: 90MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Trans GP BJT NPN 150V 5A 24000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
150V 3W 100@1A,5V 5A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT855 Series NPN 5 A 150 V SMT Silicon High Performance Transistor - SOT-223
NPN high current transistor, FZT855TA | Diodes Inc FZT855TA
NPN TRANSISTOR 150V 5A 3WSOT223
Transistor,NPN,150V,5A,SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency ft:90MHz; Power Dissipation
TRANSISTOR,NPN,150V,5A,SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 180V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 3W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Gain Bandwidth ft Typ: 90MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to FZT855TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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FZT855TA15 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Other Transistors150V3WDUALGULL WING2605A90MHz40FZT855R-PDSO-G41Single3WCOLLECTORSWITCHING90MHzNPNNPN150V5A100 @ 1A 5V50nA ICBO355mV @ 500mA, 5A150V90MHz355mV150V250V6V5A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-
-
--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)2012--Obsolete1 (Unlimited)---30V3W---7A--FZT849------100MHz-NPN350mV7A100 @ 1A 1V50nA ICBO350mV @ 300mA, 6.5A30V---80V6V7A---No SVHC-RoHS CompliantLead Free
-
--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)2013--Obsolete1 (Unlimited)---150V3W---5A--FZT855------90MHz-NPN355mV5A100 @ 1A 5V50nA ICBO355mV @ 500mA, 5A150V---250V6V5A---No SVHC-RoHS CompliantLead Free
-
--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---100V3W---6A--FZT853--Single---130MHz-NPN340mV6A100 @ 2A 2V10nA ICBO340mV @ 500mA, 5A100V---200V6V6A1.65mm6.7mm3.7mm--RoHS CompliantLead Free
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