Diodes Incorporated FZT853TA
- Part Number:
- FZT853TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068761-FZT853TA
- Description:
- TRANS NPN 100V 6A SOT-223
- Datasheet:
- FZT853TA
Diodes Incorporated FZT853TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT853TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated DC100V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating6A
- Frequency130MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberFZT853
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A 2V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic340mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency130MHz
- Collector Emitter Saturation Voltage340mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current6A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT853TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 500mA, 5A.A 6A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated
FZT853TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 500mA, 5A.A 6A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated
FZT853TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT853TA More Descriptions
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT853 Series NPN 6 A 100 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3 Tab) SOT-223 T/R
SMT NPN transistor, FZT853 6A Ic 2Vce | Diodes Inc FZT853TA
NPN TRANSISTOR 100V 6A 3WSOT223
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Max Current Ic:6A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:50mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT853; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:200V
FZT853 Series NPN 6 A 100 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3 Tab) SOT-223 T/R
SMT NPN transistor, FZT853 6A Ic 2Vce | Diodes Inc FZT853TA
NPN TRANSISTOR 100V 6A 3WSOT223
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Max Current Ic:6A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:50mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT853; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:200V
The three parts on the right have similar specifications to FZT853TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeCurrent - Collector (Ic) (Max)Terminal FinishHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusConfigurationView Compare
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FZT853TA15 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3noActive1 (Unlimited)4EAR99100V3WDUALGULL WING2606A130MHz30FZT8531Single3WCOLLECTORSWITCHING130MHzNPNNPN100V6A100 @ 2A 2V10nA ICBO340mV @ 500mA, 5A100V130MHz340mV100V200V6V6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------
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--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)2006--Obsolete1 (Unlimited)--25V3W---6.5A--FZT869-----100MHz-NPN350mV7A300 @ 1A 1V50nA ICBO350mV @ 150mA, 6.5A25V---60V6V----No SVHC-RoHS CompliantLead Free7A------
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--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)2012--Obsolete1 (Unlimited)--30V3W---7A--FZT849-----100MHz-NPN350mV7A100 @ 1A 1V50nA ICBO350mV @ 300mA, 6.5A30V---80V6V7A---No SVHC-RoHS CompliantLead Free-------
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--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99300V3WDUALGULL WING2603.5A-40FZT8571--COLLECTORSWITCHING80MHzNPNNPN345mV3.5A100 @ 500mA 10V50nA ICBO345mV @ 600mA, 3.5A300V80MHz--350V6V3.5A---No SVHC-RoHS CompliantLead Free-MATTE TIN8541.29.00.75unknownR-PDSO-G4Not QualifiedSINGLE
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