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FZT849TA

Diodes Incorporated FZT849TA

Part Number:
FZT849TA
Manufacturer:
Diodes Incorporated
Ventron No:
3585268-FZT849TA
Description:
TRANS NPN 30V 7A SOT-223
ECAD Model:
Datasheet:
FZT849TA

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Specifications
Diodes Incorporated FZT849TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT849TA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    3W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    7A
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    FZT849
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    7A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1A 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    350mV @ 300mA, 6.5A
  • Collector Emitter Breakdown Voltage
    120V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    350mV
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Continuous Collector Current
    7A
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FZT849TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 300mA, 6.5A.Continuous collector voltages of 7A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 7A volts.

FZT849TA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz


FZT849TA Applications
There are a lot of Diodes Incorporated
FZT849TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FZT849TA More Descriptions
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT849 Series NPN 7 A 30 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT NPN 30V 7A Automotive 4-Pin(3 Tab) SOT-223
SMT NPN transistor, FZT849 7A Ic 1Vce | Diodes Inc FZT849TA
TRANSISTOR, NPN, REEL 1K; Transistor Type:Bipolar; Transistor Polarity:NPN; Voltage, Vceo:30V; Current, Ic Continuous a Max:7A; Voltage, Vce Sat Max:50mV; Power Dissipation:3W; Hfe, Min:100; ft, Typ:100MHz; Case Style:SOT-223; RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 3W; DC Collector Current: 7A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 7A; Current Ic Continuous a Max: 7A; Current Ic hFE: 7A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3W; Pulsed Current Icm: 20A; Reel Quantity: 1000; SMD Marking: FZT849; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vcbo: 80V
Product Comparison
The three parts on the right have similar specifications to FZT849TA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Current - Collector (Ic) (Max)
    View Compare
  • FZT849TA
    FZT849TA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    no
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    Other Transistors
    30V
    3W
    DUAL
    GULL WING
    260
    7A
    100MHz
    40
    FZT849
    R-PDSO-G4
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    100MHz
    NPN
    NPN
    30V
    7A
    100 @ 1A 1V
    50nA ICBO
    350mV @ 300mA, 6.5A
    120V
    100MHz
    350mV
    30V
    80V
    7V
    100
    150°C
    7A
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • FZT857TA
    FZT857TA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    -
    -
    300V
    3W
    DUAL
    GULL WING
    260
    3.5A
    80MHz
    40
    FZT857
    R-PDSO-G4
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    80MHz
    NPN
    NPN
    300V
    3.5A
    100 @ 500mA 10V
    50nA ICBO
    345mV @ 600mA, 3.5A
    300V
    80MHz
    345mV
    300V
    350V
    6V
    100
    -
    3.5A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    -
    FZT849TA vs FZT857TA
  • FZT869TC
    FZT869TC
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    25V
    3W
    -
    -
    -
    6.5A
    -
    -
    FZT869
    -
    -
    -
    -
    -
    -
    100MHz
    -
    NPN
    350mV
    7A
    300 @ 1A 1V
    50nA ICBO
    350mV @ 150mA, 6.5A
    25V
    -
    -
    -
    60V
    6V
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    -
    7A
    FZT849TA vs FZT869TC
  • FZT855TC
    FZT855TC
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    150V
    3W
    -
    -
    -
    5A
    -
    -
    FZT855
    -
    -
    -
    -
    -
    -
    90MHz
    -
    NPN
    355mV
    5A
    100 @ 1A 5V
    50nA ICBO
    355mV @ 500mA, 5A
    150V
    -
    -
    -
    250V
    6V
    -
    -
    5A
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    -
    -
    FZT849TA vs FZT855TC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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