Diodes Incorporated FZT857TA

Name: FZT857TA
Brand: Diodes Incorporated
SKU: 2846406-FZT857TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FZT857TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2846406-FZT857TA

Description:: TRANS NPN 300V 3.5A SOT-223

ECAD Model:

Datasheet:: FZT857TA

Specifications

Diodes Incorporated FZT857TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT857TA.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Voltage - Rated DC
300V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3.5A
Frequency
80MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
FZT857
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
345mV @ 600mA, 3.5A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
80MHz
Collector Emitter Saturation Voltage
345mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Continuous Collector Current
3.5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FZT857TA Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 345mV.A VCE saturation (Max) of 345mV @ 600mA, 3.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 3.5A volts is possible.

FZT857TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz

FZT857TA Applications
There are a lot of Diodes Incorporated
FZT857TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

FZT857TA More Descriptions

Trans GP BJT NPN 300V 3.5A 3000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
FZT857 Series NPN 3.5 A 300 V SMT Silicon High Performance Transistor - SOT-223
300V 3W 100@500mA,10V 3.5A NPN SOT-223 Bipolar Transistors - BJT ROHS
NPN Transistor,3.5A,300V, SOT223 | Diodes Inc FZT857TA
Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:300V; Typ Gain Bandwidth ft:80MHz; Power Dissipation Pd:3W; DC Collector Current:3.5A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic Hfe NPN Device:0.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:3.5A; Max Current Ic Continuous a:3.5A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:100mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:5A; Reel Quantity:1000; SMD Marking:FZT857; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:350V

Product Comparison

The three parts on the right have similar specifications to FZT857TA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Current - Collector (Ic) (Max)

Terminal Finish

Additional Feature

Subcategory

Reach Compliance Code

Reference Standard

Configuration

Power - Max

Frequency - Transition

View Compare
FZT857TA

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

no

Active

1 (Unlimited)

4

SMD/SMT

EAR99

300V

3W

DUAL

GULL WING

260

3.5A

80MHz

40

FZT857

R-PDSO-G4

1

Single

3W

COLLECTOR

SWITCHING

80MHz

NPN

NPN

300V

3.5A

100 @ 500mA 10V

50nA ICBO

345mV @ 600mA, 3.5A

300V

80MHz

345mV

300V

350V

6V

100

3.5A

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FZT869TC

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

7.994566mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2006

-

-

Obsolete

1 (Unlimited)

-

-

-

25V

3W

-

-

-

6.5A

-

-

FZT869

-

-

-

-

-

-

100MHz

-

NPN

350mV

7A

300 @ 1A 1V

50nA ICBO

350mV @ 150mA, 6.5A

25V

-

-

-

60V

6V

-

-

-

-

-

No SVHC

-

RoHS Compliant

Lead Free

7A

-

-

-

-

-

-

-

-

FZT857TA vs FZT869TC
FZT853TC

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

7.994566mg

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

100V

3W

-

-

-

6A

-

-

FZT853

-

-

Single

-

-

-

130MHz

-

NPN

340mV

6A

100 @ 2A 2V

10nA ICBO

340mV @ 500mA, 5A

100V

-

-

-

200V

6V

-

6A

1.65mm

6.7mm

3.7mm

-

-

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

FZT857TA vs FZT853TC
FZT851QTA

Diodes Incorporated

30 Weeks

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

no

Active

1 (Unlimited)

4

-

EAR99

-

3W

DUAL

GULL WING

260

-

-

40

-

R-PDSO-G4

1

-

-

COLLECTOR

-

-

NPN

NPN

375mV

6A

100 @ 2A 1V

50nA ICBO

375mV @ 300mA, 6A

60V

130MHz

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

not_compliant

AEC-Q101

SINGLE

3W

130MHz

FZT857TA vs FZT851QTA

Certification

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FZT857T~~(2)~~
FZT857~~(4)~~
FZT85~~(13)~~
FZT8~~(20)~~
FZT~~(60)~~

Part Number	Manufacturers	Description	Stock	Price
FZT857TA DISTI #	Diodes Incorporated	TRANS NPN 300V 3.5A SOT-223 RoHS: Compliant	0	1000 $0.518 2000 $0.4872 5000 $0.46564 10000 $0.45024
FZT857TA DISTI #	Diodes Incorporated	TRANS NPN 300V 3.5A SOT-223 RoHS: Compliant	0	1 $1.11 10 $0.994 100 $0.7874 500 $0.66044
FZT857TA DISTI #	Diodes Incorporated	Trans GP BJT NPN 300V 3.5A 4-Pin(3 Tab) SOT-223 T/ RoHS: Not Compliant	0	1000 $0.4389 2000 $0.41954 3000 $0.40181 5000 $0.3908 10000 $0.38552 25000 $0.37538 50000 $0.36575
FZT857TA DISTI #	Diodes Incorporated	Trans GP BJT NPN 300V 3.5A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	1000 $0.4019 2000 $0.3819 4000 $0.3639 6000 $0.3479 10000 $0.3399
FZT857TA DISTI #	Diodes Incorporated	NPN Transistor, 3.5A, 300V, SOT223 RoHS: Compliant	0	25 $0.99 100 $0.86 250 $0.78 500 $0.71
FZT857TA DISTI #	Diodes Incorporated	Bipolar Transistors - BJT NPN High Voltage RoHS: Compliant	0	1 $0.92 10 $0.784 100 $0.603 500 $0.533 1000 $0.42
FZT857TA DISTI #	Zetex / Diodes Inc	Trans GP BJT NPN 300V 3.5A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	18105	1 $1.05 100 $0.57 500 $0.52 1000 $0.48 2000 $0.46 10000 $0.43 25000 $0.42 50000 $0.41
FZT857TA DISTI #	Zetex / Diodes Inc	3.5 A, 300 V, NPN, Si, POWER TRANSISTOR	2	1 $1.04
FZT857TA DISTI #	Zetex / Diodes Inc	NPN TRANSISTOR 3.5A 300V SOT223, PK	315	5 $1.072 25 $0.636 50 $0.56 250 $0.482 500 $0.406
FZT857TA DISTI #	Zetex / Diodes Inc	NPN TRANSISTOR 3.5A 300V SOT223, RL	1250	25 $0.636 50 $0.56 250 $0.482 500 $0.406
FZT857TA DISTI #	Zetex / Diodes Inc	RoHS: Compliant	570
FZT857TA DISTI #	#9	INSTOCK	3415

Diodes Incorporated FZT857TA

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