FQT7N10LTF

Fairchild/ON Semiconductor FQT7N10LTF

Part Number:
FQT7N10LTF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478055-FQT7N10LTF
Description:
MOSFET N-CH 100V 1.7A SOT-223
ECAD Model:
Datasheet:
FQT7N10LTF

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Specifications
Fairchild/ON Semiconductor FQT7N10LTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQT7N10LTF.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Weight
    188mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    350mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    1.7A
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 850mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 5V
  • Rise Time
    100ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    1.7A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    6.8A
  • Avalanche Energy Rating (Eas)
    50 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    3.56mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQT7N10LTF Description
FQT7N10LTF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

FQT7N10LTF Features
1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A
Low gate charge ( Typ. 5.8nC)
Low Crss ( Typ. 10pF)
100% avalanche tested

FQT7N10LTF Applications
LED TV
Consumer Appliances
Lighting
FQT7N10LTF More Descriptions
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3 Tab) SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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