Fairchild/ON Semiconductor FQT7N10LTF
- Part Number:
- FQT7N10LTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478055-FQT7N10LTF
- Description:
- MOSFET N-CH 100V 1.7A SOT-223
- Datasheet:
- FQT7N10LTF
Fairchild/ON Semiconductor FQT7N10LTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQT7N10LTF.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance350mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.7A
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 850mA, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds290pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.7A Tc
- Gate Charge (Qg) (Max) @ Vgs6nC @ 5V
- Rise Time100ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)1.7A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)6.8A
- Avalanche Energy Rating (Eas)50 mJ
- Max Junction Temperature (Tj)150°C
- Height1.8mm
- Length6.5mm
- Width3.56mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQT7N10LTF Description
FQT7N10LTF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQT7N10LTF Features
1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A
Low gate charge ( Typ. 5.8nC)
Low Crss ( Typ. 10pF)
100% avalanche tested
FQT7N10LTF Applications
LED TV
Consumer Appliances
Lighting
FQT7N10LTF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQT7N10LTF Features
1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A
Low gate charge ( Typ. 5.8nC)
Low Crss ( Typ. 10pF)
100% avalanche tested
FQT7N10LTF Applications
LED TV
Consumer Appliances
Lighting
FQT7N10LTF More Descriptions
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3 Tab) SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3 Tab) SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
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