Fairchild/ON Semiconductor FQPF7N65C
- Part Number:
- FQPF7N65C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484175-FQPF7N65C
- Description:
- MOSFET N-CH 650V 7A TO-220F
- Datasheet:
- FQPF7N65C
Fairchild/ON Semiconductor FQPF7N65C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF7N65C.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.4Ohm
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- Voltage - Rated DC650V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating7A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation52W
- Case ConnectionISOLATED
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1245pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)55 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)7A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)7A
- Drain to Source Breakdown Voltage650V
- Pulsed Drain Current-Max (IDM)28A
- Height9.19mm
- Length10.16mm
- Width4.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQPF7N65C Description
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
Low gate charge ( Typ. 28nC)
Low Crss ( Typ. 12pF)
100% avalanche tested
In the TO-220-3 package
FQPF7N65C Applications
LCD TV
LED TV
Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
The FQPF7N65C is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQPF7N65C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The Onsemi FQPF7N65C is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF7N65C Features
7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A
Low gate charge ( Typ. 28nC)
Low Crss ( Typ. 12pF)
100% avalanche tested
In the TO-220-3 package
FQPF7N65C Applications
LCD TV
LED TV
Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
FQPF7N65C More Descriptions
Power MOSFET, N-Channel, QFET®, 650 V, 7 A, 1.4 Ω, TO-220F
N-Channel 650 V 1.4 Ohm Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 650V 7A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
MOSFET, N CH, 650V, 7A, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 1.2ohm; Rds; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
N-Channel 650 V 1.4 Ohm Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 650V 7A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
MOSFET, N CH, 650V, 7A, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 1.2ohm; Rds; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
The three parts on the right have similar specifications to FQPF7N65C.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionPin CountJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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FQPF7N65CACTIVE (Last Updated: 1 day ago)TinThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeQFET®2004e3yesActive1 (Unlimited)3EAR991.4OhmFAST SWITCHINGFET General Purpose Power650VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant7ANOT SPECIFIEDNot Qualified152W TcSingleENHANCEMENT MODE52WISOLATED20 nsN-ChannelSWITCHING1.4 Ω @ 3.5A, 10V4V @ 250μA1245pF @ 25V7A Tc36nC @ 10V50ns10V±30V55 ns90 ns7A4VTO-220AB30V7A650V28A9.19mm10.16mm4.7mmNo SVHCROHS3 CompliantLead Free-----------
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---Through HoleTO-220-3 Full Pack--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3-----MOSFET (Metal Oxide)NOT SPECIFIEDunknown-NOT SPECIFIEDCOMMERCIAL156W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING430m Ω @ 6.25A, 10V5V @ 250μA2.3pF @ 25V12.5A Tc60nC @ 10V-10V±30V----TO-220AB-13A-52A----ROHS3 Compliant-NOMATTE TINSINGLE3R-PSFM-T3SINGLE WITH BUILT-IN DIODE500V0.48Ohm500V860 mJ
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---Through HoleTO-220-3 Full Pack--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3-----MOSFET (Metal Oxide)NOT APPLICABLE--NOT APPLICABLECOMMERCIAL128W Tc-ENHANCEMENT MODE---P-ChannelSWITCHING10.5 Ω @ 515mA, 10V5V @ 250μA350pF @ 25V1.03A Tc14nC @ 10V-10V±30V------1.03A-4.12A----ROHS3 Compliant-NOMATTE TINSINGLE3R-PSFM-T3SINGLE WITH BUILT-IN DIODE500V-500V110 mJ
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ACTIVE, NOT REC (Last Updated: 3 days ago)-Through HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeQFET®2007e3yesObsolete1 (Unlimited)3EAR99---600VMOSFET (Metal Oxide)NOT SPECIFIED-12ANOT SPECIFIEDNot Qualified151W TcSingleENHANCEMENT MODE51WISOLATED-N-ChannelSWITCHING650m Ω @ 6A, 10V4V @ 250μA2290pF @ 25V12A Tc63nC @ 10V85ns10V±30V90 ns155 ns12A4VTO-220AB30V-600V48A---No SVHCRoHS CompliantLead Free-Tin (Sn)-----0.65Ohm-870 mJ
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