Fairchild/ON Semiconductor FQP50N06
- Part Number:
- FQP50N06
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482925-FQP50N06
- Description:
- MOSFET N-CH 60V 50A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FQP50N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP50N06.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 3 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance22mOhm
- Terminal FinishTin (Sn)
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating50A
- Number of Elements1
- Power Dissipation-Max120W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation120W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1540pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Rise Time105ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)50A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)200A
- Avalanche Energy Rating (Eas)490 mJ
- Height9.4mm
- Length10.1mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQP50N06 Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQP50N06 Features
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 NC)
Low Cross ( typical 65 pF)
Fast switching
100% avalanche tested
Improved DV/dt capability
175°C maximum junction temperature rating
FQP50N06 Applications
General-purpose amplifier
Switching applications
Power management
Industrial
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQP50N06 Features
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 NC)
Low Cross ( typical 65 pF)
Fast switching
100% avalanche tested
Improved DV/dt capability
175°C maximum junction temperature rating
FQP50N06 Applications
General-purpose amplifier
Switching applications
Power management
Industrial
FQP50N06 More Descriptions
Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220
Transistor FQP50N06 MOSFET N-Channel 60 Volt 50 Amp TO-220
Trans MOSFET N-CH 60V 50A 3-Pin (3 Tab) TO-220AB Rail
N-Channel 60 V 0.022 Ohm Through Hole Mosfet - TO-220
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:120W; Rohs Compliant: Yes |Onsemi FQP50N06...
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Transistor FQP50N06 MOSFET N-Channel 60 Volt 50 Amp TO-220
Trans MOSFET N-CH 60V 50A 3-Pin (3 Tab) TO-220AB Rail
N-Channel 60 V 0.022 Ohm Through Hole Mosfet - TO-220
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:120W; Rohs Compliant: Yes |Onsemi FQP50N06...
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The three parts on the right have similar specifications to FQP50N06.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinCase ConnectionDrain-source On Resistance-MaxView Compare
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FQP50N06ACTIVE, NOT REC (Last Updated: 3 days ago)Through HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubeQFET®2003e3yesNot For New Designs1 (Unlimited)3EAR9922mOhmTin (Sn)60VMOSFET (Metal Oxide)50A1120W TcSingleENHANCEMENT MODE120W15 nsN-ChannelSWITCHING22m Ω @ 25A, 10V4V @ 250μA1540pF @ 25V50A Tc41nC @ 10V105ns10V±25V65 ns60 ns50A4VTO-220AB25V60V200A490 mJ9.4mm10.1mm4.7mmNo SVHCNoROHS3 CompliantLead Free----------------
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--Through HoleTO-220-3----55°C~150°C TJTubeQFET®2000--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--158W Tc----N-Channel-2.3Ohm @ 2.7A, 10V5V @ 250μA1550pF @ 25V5.4A Tc40nC @ 10V-10V±30V----------------TO-220-3900V-------------
-
--Through HoleTO-220-3--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3--MATTE TIN-MOSFET (Metal Oxide)-1140W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING2.6 Ω @ 2.4A, 10V5V @ 250μA1.25pF @ 25V4.8A Tc33nC @ 10V-10V±30V----TO-220AB--19.2A590 mJ-----ROHS3 Compliant--800VNOSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE4.8A800V--
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--Through HoleTO-220-3--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3--MATTE TIN-MOSFET (Metal Oxide)-152W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING1.2 Ω @ 2.25A, 10V2V @ 250μA325pF @ 25V4.5A Tc6.2nC @ 5V-5V 10V±20V----TO-220AB--18A60 mJ-----ROHS3 Compliant--200VNOSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE4.5A200VDRAIN1.25Ohm
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