FQP50N06

Fairchild/ON Semiconductor FQP50N06

Part Number:
FQP50N06
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482925-FQP50N06
Description:
MOSFET N-CH 60V 50A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor FQP50N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP50N06.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 3 days ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    22mOhm
  • Terminal Finish
    Tin (Sn)
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    50A
  • Number of Elements
    1
  • Power Dissipation-Max
    120W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    120W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1540pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 10V
  • Rise Time
    105ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    65 ns
  • Turn-Off Delay Time
    60 ns
  • Continuous Drain Current (ID)
    50A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Avalanche Energy Rating (Eas)
    490 mJ
  • Height
    9.4mm
  • Length
    10.1mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQP50N06 Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQP50N06 Features
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 NC)
Low Cross ( typical 65 pF)
Fast switching
100% avalanche tested
Improved DV/dt capability
175°C maximum junction temperature rating

FQP50N06 Applications
General-purpose amplifier
Switching applications
Power management
Industrial
FQP50N06 More Descriptions
Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220
Transistor FQP50N06 MOSFET N-Channel 60 Volt 50 Amp TO-220
Trans MOSFET N-CH 60V 50A 3-Pin (3 Tab) TO-220AB Rail
N-Channel 60 V 0.022 Ohm Through Hole Mosfet - TO-220
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:120W; Rohs Compliant: Yes |Onsemi FQP50N06...
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Product Comparison
The three parts on the right have similar specifications to FQP50N06.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Case Connection
    Drain-source On Resistance-Max
    View Compare
  • FQP50N06
    FQP50N06
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    2003
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    22mOhm
    Tin (Sn)
    60V
    MOSFET (Metal Oxide)
    50A
    1
    120W Tc
    Single
    ENHANCEMENT MODE
    120W
    15 ns
    N-Channel
    SWITCHING
    22m Ω @ 25A, 10V
    4V @ 250μA
    1540pF @ 25V
    50A Tc
    41nC @ 10V
    105ns
    10V
    ±25V
    65 ns
    60 ns
    50A
    4V
    TO-220AB
    25V
    60V
    200A
    490 mJ
    9.4mm
    10.1mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQP5N90
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~150°C TJ
    Tube
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    158W Tc
    -
    -
    -
    -
    N-Channel
    -
    2.3Ohm @ 2.7A, 10V
    5V @ 250μA
    1550pF @ 25V
    5.4A Tc
    40nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-3
    900V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQP5N80
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    -
    1
    140W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    2.6 Ω @ 2.4A, 10V
    5V @ 250μA
    1.25pF @ 25V
    4.8A Tc
    33nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    TO-220AB
    -
    -
    19.2A
    590 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    800V
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    4.8A
    800V
    -
    -
  • FQP5N20L
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    -
    1
    52W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.2 Ω @ 2.25A, 10V
    2V @ 250μA
    325pF @ 25V
    4.5A Tc
    6.2nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    -
    -
    TO-220AB
    -
    -
    18A
    60 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    200V
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    4.5A
    200V
    DRAIN
    1.25Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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