Fairchild/ON Semiconductor FQP2N60C

Name: FQP2N60C
Brand: Fairchild/ON Semiconductor
SKU: 3070437-FQP2N60C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP2N60C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070437-FQP2N60C

Description:: MOSFET N-CH 600V 2A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP2N60C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP2N60C.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
4.7Ohm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
2A
Number of Elements
1
Power Dissipation-Max
54W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
54W
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
2A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
2A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
8A
Dual Supply Voltage
600V
Nominal Vgs
4 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP2N60C Description FQP2N60C N-Channel MOSFET is to be used in a variety of applications. FQP2N60C MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQP2N60C is widely used in switched-mode power supplies, active power factor correction, and electronic lamp ballasts. FQP2N60C Features Very low on-resistance ROHS Compliant Low gate charge Low Crss 100% avalanche tested FQP2N60C Applications Lamp ballasts Other Industrial Switch DC-DC converter High-voltage applications

FQP2N60C More Descriptions

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220
Transistor: N-MOSFET; unipolar; 600V; 1.35A; 54W; TO220; QFET®
Trans MOSFET N-CH 600V 2A 3-Pin(3 Tab) TO-220 Tube / MOSFET N-CH 600V 2A TO-220
Single N-Channel 600 V 4.7 Ohm 12 nC 54 W DMOS Mosfet - TO-220-3
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:4.7ohm; Package / Case:TO-220; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to FQP2N60C.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
FQP2N60C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

Through Hole

EAR99

4.7Ohm

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

2A

1

54W Tc

Single

ENHANCEMENT MODE

54W

9 ns

N-Channel

SWITCHING

4.7 Ω @ 1A, 10V

4V @ 250μA

235pF @ 25V

2A Tc

12nC @ 10V

25ns

10V

±30V

28 ns

24 ns

2A

4V

TO-220AB

30V

2A

600V

8A

600V

4 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-
FQP22N30

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2000

e3

yes

Active

1 (Unlimited)

3

-

EAR99

160MOhm

Tin (Sn)

FET General Purpose Power

300V

MOSFET (Metal Oxide)

21A

1

170W Tc

Single

ENHANCEMENT MODE

170W

35 ns

N-Channel

SWITCHING

160m Ω @ 10.5A, 10V

5V @ 250μA

2200pF @ 25V

21A Tc

60nC @ 10V

230ns

10V

±30V

100 ns

85 ns

21A

5V

TO-220AB

30V

-

300V

84A

-

5 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

FQP2N60C vs FQP22N30
FQP20N06TSTU

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

QFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

60V

MOSFET (Metal Oxide)

20A

-

53W Tc

Single

-

53W

-

N-Channel

-

60m Ω @ 10A, 10V

4V @ 250μA

590pF @ 25V

20A Tc

15nC @ 10V

45ns

10V

±25V

25 ns

20 ns

20A

-

-

25V

-

60V

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

FQP2N60C vs FQP20N06TSTU
FQP2N30

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

2000

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

40W Tc

-

-

-

-

N-Channel

-

3.7Ohm @ 1.05A, 10V

5V @ 250μA

130pF @ 25V

2.1A Tc

5nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

300V

FQP2N60C vs FQP2N30