Fairchild/ON Semiconductor FQP22N30

Name: FQP22N30
Brand: Fairchild/ON Semiconductor
SKU: 2848868-FQP22N30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP22N30

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848868-FQP22N30

Description:: MOSFET N-CH 300V 21A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Part Pictures

Specifications

Fairchild/ON Semiconductor FQP22N30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP22N30.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
160MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
300V
Technology
MOSFET (Metal Oxide)
Current Rating
21A
Number of Elements
1
Power Dissipation-Max
170W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
170W
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
230ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
100 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
21A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
300V
Pulsed Drain Current-Max (IDM)
84A
Nominal Vgs
5 V
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP22N30 Description This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductor's proprietaryplanar stripe and DMOs technology. This advancedMOSFET technology has been especially tailored to reduceon-state resistance，and to provide superior switchingperformance and high avalanche energy 'strength. Thesedevices are suitable for switched mode power supplies,active power factor correction (PFC), and electronic lampballasts.

FQP22N30 Features 21A,300 V,RDs(on)= 160 mQ (Max.)@Vcs = 10 v, lD= 10.5A Low Gate Charge (Typ. 47 nC) Low Crss (Typ. 40 pF) 100%Avalanche Tested

FQP22N30 More Descriptions

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220
Trans MOSFET N-CH 300V 21A 3-Pin(3 Tab) TO-220AB Rail
N-Channel 300 V 0.16 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 300V, 21A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:300V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-220; Power Dissipation Pd:170W; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FQP22N30.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
FQP22N30

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

QFET®

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

160MOhm

Tin (Sn)

FET General Purpose Power

300V

MOSFET (Metal Oxide)

21A

1

170W Tc

Single

ENHANCEMENT MODE

170W

35 ns

N-Channel

SWITCHING

160m Ω @ 10.5A, 10V

5V @ 250μA

2200pF @ 25V

21A Tc

60nC @ 10V

230ns

10V

±30V

100 ns

85 ns

21A

5V

TO-220AB

30V

300V

84A

5 V

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP22P10

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

QFET®

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

125W Tc

-

-

-

-

P-Channel

-

125mOhm @ 11A, 10V

4V @ 250μA

1500pF @ 25V

22A Tc

50nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

FQP22N30 vs FQP22P10
FQP20N06TSTU

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

QFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

60V

MOSFET (Metal Oxide)

20A

-

53W Tc

Single

-

53W

-

N-Channel

-

60m Ω @ 10A, 10V

4V @ 250μA

590pF @ 25V

20A Tc

15nC @ 10V

45ns

10V

±25V

25 ns

20 ns

20A

-

-

25V

60V

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQP22N30 vs FQP20N06TSTU
FQP2P25

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

52W Tc

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

4 Ω @ 1.15A, 10V

5V @ 250μA

250pF @ 25V

2.3A Tc

8.5nC @ 10V

-

10V

±30V

-

-

-

-

TO-220AB

-

-

9.2A

-

-

-

-

-

-

ROHS3 Compliant

-

-

250V

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

2.3A

4Ohm

250V

120 mJ

FQP22N30 vs FQP2P25