Fairchild/ON Semiconductor FQP20N06L
- Part Number:
- FQP20N06L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482978-FQP20N06L
- Description:
- MOSFET N-CH 60V 21A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FQP20N06L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP20N06L.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance70mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating21A
- Number of Elements1
- Power Dissipation-Max53W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation53W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs55m Ω @ 10.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds630pF @ 25V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
- Rise Time165ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)21A
- Threshold Voltage2.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)84A
- Height9.4mm
- Length10.1mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQP20N06L Description
FQP20N06L is an N-Channel QFET? Power MOSFET. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. The advanced MOSFET FQP20N06L has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQP20N06L is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP20N06L Features
21A, 60V, RDS(on) = 55mΩ(Max.) @VGS = 10 V, ID = 10.5A
Low gate charge ( Typ. 9.5nC)
Low Crss ( Typ. 35pF)
100% avalanche tested
175°C maximum junction temperature rating
FQP20N06L Applications
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
Other Audio & Video
FQP20N06L is an N-Channel QFET? Power MOSFET. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. The advanced MOSFET FQP20N06L has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQP20N06L is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP20N06L Features
21A, 60V, RDS(on) = 55mΩ(Max.) @VGS = 10 V, ID = 10.5A
Low gate charge ( Typ. 9.5nC)
Low Crss ( Typ. 35pF)
100% avalanche tested
175°C maximum junction temperature rating
FQP20N06L Applications
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
Other Audio & Video
FQP20N06L More Descriptions
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220
N-Channel 60 V 55 mOhm Flange Mount Power Mosfet - TO-220
Trans MOSFET N-CH 60V 21A 3-Pin(3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, 60V, 21A; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 53W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
N-Channel 60 V 55 mOhm Flange Mount Power Mosfet - TO-220
Trans MOSFET N-CH 60V 21A 3-Pin(3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, 60V, 21A; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 53W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to FQP20N06L.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Supplier Device PackageDrain to Source Voltage (Vdss)View Compare
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FQP20N06LACTIVE (Last Updated: 2 days ago)5 WeeksTinThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubeQFET®2001e3yesActive1 (Unlimited)3EAR9970mOhmFET General Purpose Power60VMOSFET (Metal Oxide)21A153W TcSingleENHANCEMENT MODE53W10 nsN-ChannelSWITCHING55m Ω @ 10.5A, 10V2.5V @ 250μA630pF @ 25V21A Tc13nC @ 5V165ns5V 10V±20V70 ns35 ns21A2.5VTO-220AB20V60V84A9.4mm10.1mm4.7mmNo SVHCNoROHS3 CompliantLead Free-------
-
ACTIVE (Last Updated: 2 days ago)5 Weeks-Through HoleThrough HoleTO-220-3-1.8gSILICON-55°C~175°C TJTubeQFET®-e3yesActive1 (Unlimited)3EAR99-FET General Purpose Power80VMOSFET (Metal Oxide)24A175W TcSingleENHANCEMENT MODE75W10 nsN-ChannelSWITCHING60m Ω @ 12A, 10V4V @ 250μA750pF @ 25V24A Tc25nC @ 10V105ns10V±25V35 ns30 ns24A-TO-220AB25V80V96A----NoROHS3 CompliantLead FreeTin (Sn)R-PSFM-T30.06Ohm230 mJ--
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----Through HoleTO-220-3----55°C~175°C TJTubeQFET®2002--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--125W Tc----P-Channel-125mOhm @ 11A, 10V4V @ 250μA1500pF @ 25V22A Tc50nC @ 10V-10V±30V-------------------TO-220-3100V
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---Through HoleThrough HoleTO-220-3----55°C~175°C TJTubeQFET®2013--Obsolete1 (Unlimited)----60VMOSFET (Metal Oxide)20A-53W TcSingle-53W-N-Channel-60m Ω @ 10A, 10V4V @ 250μA590pF @ 25V20A Tc15nC @ 10V45ns10V±25V25 ns20 ns20A--25V60V------RoHS CompliantLead Free------
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