FQP20N06L

Fairchild/ON Semiconductor FQP20N06L

Part Number:
FQP20N06L
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482978-FQP20N06L
Description:
MOSFET N-CH 60V 21A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor FQP20N06L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP20N06L.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    5 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    70mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    21A
  • Number of Elements
    1
  • Power Dissipation-Max
    53W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    53W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 10.5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    630pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 5V
  • Rise Time
    165ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    70 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    21A
  • Threshold Voltage
    2.5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    84A
  • Height
    9.4mm
  • Length
    10.1mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQP20N06L Description
FQP20N06L is an N-Channel QFET? Power MOSFET. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. The advanced MOSFET FQP20N06L has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQP20N06L is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

FQP20N06L Features
21A, 60V, RDS(on) = 55mΩ(Max.) @VGS = 10 V, ID = 10.5A
Low gate charge ( Typ. 9.5nC)
Low Crss ( Typ. 35pF)
100% avalanche tested
175°C maximum junction temperature rating

FQP20N06L Applications
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
Other Audio & Video
FQP20N06L More Descriptions
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220
N-Channel 60 V 55 mOhm Flange Mount Power Mosfet - TO-220
Trans MOSFET N-CH 60V 21A 3-Pin(3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, 60V, 21A; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 53W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to FQP20N06L.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JESD-30 Code
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • FQP20N06L
    FQP20N06L
    ACTIVE (Last Updated: 2 days ago)
    5 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    70mOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    21A
    1
    53W Tc
    Single
    ENHANCEMENT MODE
    53W
    10 ns
    N-Channel
    SWITCHING
    55m Ω @ 10.5A, 10V
    2.5V @ 250μA
    630pF @ 25V
    21A Tc
    13nC @ 5V
    165ns
    5V 10V
    ±20V
    70 ns
    35 ns
    21A
    2.5V
    TO-220AB
    20V
    60V
    84A
    9.4mm
    10.1mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FQP24N08
    ACTIVE (Last Updated: 2 days ago)
    5 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    80V
    MOSFET (Metal Oxide)
    24A
    1
    75W Tc
    Single
    ENHANCEMENT MODE
    75W
    10 ns
    N-Channel
    SWITCHING
    60m Ω @ 12A, 10V
    4V @ 250μA
    750pF @ 25V
    24A Tc
    25nC @ 10V
    105ns
    10V
    ±25V
    35 ns
    30 ns
    24A
    -
    TO-220AB
    25V
    80V
    96A
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    R-PSFM-T3
    0.06Ohm
    230 mJ
    -
    -
  • FQP22P10
    -
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    QFET®
    2002
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    125W Tc
    -
    -
    -
    -
    P-Channel
    -
    125mOhm @ 11A, 10V
    4V @ 250μA
    1500pF @ 25V
    22A Tc
    50nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-3
    100V
  • FQP20N06TSTU
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    QFET®
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    20A
    -
    53W Tc
    Single
    -
    53W
    -
    N-Channel
    -
    60m Ω @ 10A, 10V
    4V @ 250μA
    590pF @ 25V
    20A Tc
    15nC @ 10V
    45ns
    10V
    ±25V
    25 ns
    20 ns
    20A
    -
    -
    25V
    60V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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