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FQD2N60CTM

Fairchild/ON Semiconductor FQD2N60CTM

Part Number:
FQD2N60CTM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479318-FQD2N60CTM
Description:
MOSFET N-CH 600V 1.9A DPAK
ECAD Model:
Datasheet:
FQD2N60CTM

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Specifications
Fairchild/ON Semiconductor FQD2N60CTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD2N60CTM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    1.9A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Voltage
    650V
  • Power Dissipation-Max
    2.5W Ta 44W Tc
  • Element Configuration
    Single
  • Current
    18A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.7 Ω @ 950mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    235pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    28 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    1.9A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD2N60CTM Description
FQD2N60CTM belongs to the family of N-channel enhancement mode QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and high avalanche energy strength based on planar stripe and DMOS technology. Due to its high quality and reliable performance, FQD2N60CTM is well suited for switching mode power supplies, active power factor correction, and electronic lamp ballasts.

FQD2N60CTM Features
Low gate charge
Advanced switching performance
High avalanche energy strength
Planar stripe and DMOS technology
Available in the D-PAK package

FQD2N60CTM Applications
Electronic lamp ballasts
Active power factor correction
Switching mode power supplies
FQD2N60CTM More Descriptions
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3
MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Source Voltage Vds:600V; On Resistance
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FQD2N60CTM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Weight
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Pulsed Drain Current-Max (IDM)
    Terminal Finish
    View Compare
  • FQD2N60CTM
    FQD2N60CTM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    1.9A
    R-PSSO-G2
    1
    650V
    2.5W Ta 44W Tc
    Single
    18A
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    4.7 Ω @ 950mA, 10V
    4V @ 250μA
    235pF @ 25V
    1.9A Tc
    12nC @ 10V
    25ns
    10V
    ±30V
    28 ns
    24 ns
    1.9A
    4V
    30V
    600V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD24N08TF
    FQD24N08TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    2.5W Ta 50W Tc
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    60mOhm @ 9.8A, 10V
    4V @ 250μA
    750pF @ 25V
    19.6A Tc
    25nC @ 10V
    -
    10V
    ±25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    D-Pak
    80V
    -
    -
    -
    -
    -
    -
    -
    FQD2N60CTM vs FQD24N08TF
  • FQD2N90TM
    FQD2N90TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    900V
    MOSFET (Metal Oxide)
    GULL WING
    1.7A
    R-PSSO-G2
    1
    -
    2.5W Ta 50W Tc
    Single
    -
    ENHANCEMENT MODE
    2.5W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    7.2 Ω @ 850mA, 10V
    5V @ 250μA
    500pF @ 25V
    1.7A Tc
    15nC @ 10V
    35ns
    10V
    ±30V
    30 ns
    20 ns
    1.7A
    -
    30V
    900V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    260.37mg
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    6.8A
    -
    FQD2N60CTM vs FQD2N90TM
  • FQD2P40TM
    FQD2P40TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    400V
    2.5W Ta 38W Tc
    Single
    18A
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    P-Channel
    SWITCHING
    6.5 Ω @ 780mA, 10V
    5V @ 250μA
    350pF @ 25V
    1.56A Tc
    13nC @ 10V
    33ns
    10V
    ±30V
    25 ns
    22 ns
    1.56A
    -
    30V
    -400V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    Tin (Sn)
    FQD2N60CTM vs FQD2P40TM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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