Fairchild/ON Semiconductor FQD2N40TM
- Part Number:
- FQD2N40TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586669-FQD2N40TM
- Description:
- MOSFET N-CH 400V 1.4A DPAK
- Datasheet:
- FQD2N40, FQU2N40
Fairchild/ON Semiconductor FQD2N40TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD2N40TM.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta 25W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5.8Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.4A Tc
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 10V
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
FQD2N40TM Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 25V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD2N40TM Features
a 400V drain to source voltage (Vdss)
FQD2N40TM Applications
There are a lot of ON Semiconductor
FQD2N40TM applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 25V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD2N40TM Features
a 400V drain to source voltage (Vdss)
FQD2N40TM Applications
There are a lot of ON Semiconductor
FQD2N40TM applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FQD2N40TM More Descriptions
MOSFET N-CH 400V 1.4A DPAK
The three parts on the right have similar specifications to FQD2N40TM.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Lifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusLead FreeView Compare
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FQD2N40TMSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 25W TcN-Channel5.8Ohm @ 700mA, 10V5V @ 250μA150pF @ 25V1.4A Tc5.5nC @ 10V400V10V±30V-------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)QFET®-Active1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 50W TcN-Channel7.2 Ω @ 850mA, 10V5V @ 250μA500pF @ 25V1.7A Tc15nC @ 10V-10V±30VACTIVE (Last Updated: 1 day ago)4 WeeksTinSurface Mount3260.37mgSILICONe3yes2EAR99FET General Purpose Power900VGULL WINGNOT SPECIFIEDnot_compliant1.7ANOT SPECIFIEDR-PSSO-G2Not Qualified1SingleENHANCEMENT MODE2.5WDRAIN15 nsSWITCHING35ns30 ns20 ns1.7A30V900V6.8AROHS3 CompliantLead Free
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 44W TcN-Channel4.7Ohm @ 950mA, 10V4V @ 250μA235pF @ 25V1.9A Tc12nC @ 10V600V10V±30V------------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)QFET®2016Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 50W TcN-Channel6.3Ohm @ 900mA, 10V5V @ 250μA550pF @ 25V1.8A Tc15nC @ 10V800V10V±30V------------------------------------
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