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FQD20N06TM

Fairchild/ON Semiconductor FQD20N06TM

Part Number:
FQD20N06TM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479340-FQD20N06TM
Description:
MOSFET N-CH 60V 16.8A DPAK
ECAD Model:
Datasheet:
FQD20N06TM

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Specifications
Fairchild/ON Semiconductor FQD20N06TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD20N06TM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    16.8A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Voltage
    55V
  • Power Dissipation-Max
    2.5W Ta 38W Tc
  • Element Configuration
    Single
  • Current
    18A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    63m Ω @ 8.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    590pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    16.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    45ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    16.8A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    60V
  • Height
    2.3mm
  • Length
    6.6mm
  • Width
    6.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD20N06TM Description
FQD20N06TM belongs to the family of N-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD20N06TM is well suited for switching mode power supplies, DC motor control, audio amplifier, variable switching power applications, and so on.

FQD20N06TM Features
Planar stripe and DMOS technology
Advanced switching performance
Low on-state resistance
Low gate charge
Available in the D-PAK package

FQD20N06TM Applications
DC motor control
Switching mode power supplies
Audio amplifier
Variable switching power applications
FQD20N06TM More Descriptions
Power MOSFET, N-Channel, QFET®, 60 V, 16.8 A, 63 mΩ, DPAK
MOSFET, N-CH, 60V, 16.8A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 16.8A I(D), 60V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Product Comparison
The three parts on the right have similar specifications to FQD20N06TM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Weight
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Pulsed Drain Current-Max (IDM)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • FQD20N06TM
    FQD20N06TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    16.8A
    R-PSSO-G2
    1
    55V
    2.5W Ta 38W Tc
    Single
    18A
    ENHANCEMENT MODE
    2.5W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    63m Ω @ 8.4A, 10V
    4V @ 250μA
    590pF @ 25V
    16.8A Tc
    15nC @ 10V
    45ns
    10V
    ±25V
    25 ns
    20 ns
    16.8A
    4V
    25V
    60V
    2.3mm
    6.6mm
    6.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD2N90TM
    FQD2N90TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    900V
    MOSFET (Metal Oxide)
    GULL WING
    1.7A
    R-PSSO-G2
    1
    -
    2.5W Ta 50W Tc
    Single
    -
    ENHANCEMENT MODE
    2.5W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    7.2 Ω @ 850mA, 10V
    5V @ 250μA
    500pF @ 25V
    1.7A Tc
    15nC @ 10V
    35ns
    10V
    ±30V
    30 ns
    20 ns
    1.7A
    -
    30V
    900V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin
    260.37mg
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    6.8A
    -
    -
    FQD20N06TM vs FQD2N90TM
  • FQD2N60CTF_F080
    FQD2N60CTF_F080
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    2.5W Ta 44W Tc
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    4.7Ohm @ 950mA, 10V
    4V @ 250μA
    235pF @ 25V
    1.9A Tc
    12nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    600V
    FQD20N06TM vs FQD2N60CTF_F080
  • FQD2P40TM
    FQD2P40TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    400V
    2.5W Ta 38W Tc
    Single
    18A
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    P-Channel
    SWITCHING
    6.5 Ω @ 780mA, 10V
    5V @ 250μA
    350pF @ 25V
    1.56A Tc
    13nC @ 10V
    33ns
    10V
    ±30V
    25 ns
    22 ns
    1.56A
    -
    30V
    -400V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FQD20N06TM vs FQD2P40TM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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