Fairchild/ON Semiconductor FQB22P10TM

Name: FQB22P10TM
Brand: Fairchild/ON Semiconductor
SKU: 2478755-FQB22P10TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQB22P10TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478755-FQB22P10TM

Description:: MOSFET P-CH 100V 22A D2PAK

ECAD Model:

Datasheet:: FQB22P10TM

Specifications

Fairchild/ON Semiconductor FQB22P10TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQB22P10TM.

Lifecycle Status
ACTIVE (Last Updated: 18 hours ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
QFET®
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
125mOhm
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
-22A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.75W Ta 125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
125m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
170ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
110 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
-22A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
-100V
Pulsed Drain Current-Max (IDM)
88A
Dual Supply Voltage
100V
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The FQB22P10TM is a planar stripe and DMOS-produced QFET? P-channel enhancement-mode Power MOSFET. This sophisticated MOSFET technology was specifically designed to lower ON-state resistance and provide enhanced switching performance as well as strong avalanche energy strength. It's ideal for applications like switched-mode power supply, audio amplifiers, and variable switching power.

Features
● Low Gate Charge (Typ. 40 nC) ● Low Crss (Typ. 160 pF) ● 100% avalanche tested ● 40nC typical low gate charge ● 160pF typical low Crss ● 175°C Maximum Junction Temperature Rating

Applications
● Use for switching and amplifying electronic signals ● As an inverter ● In digital circuit ● Use as a high-frequency amplifier ● Circuit

FQB22P10TM More Descriptions

Trans MOSFET P-CH 100V 22A 3-Pin(2 Tab) D2PAK T/R / MOSFET P-CH 100V 22A D2PAK
Transistor, P-channel, QFET MOSFET, -100V, 22A, 125 mOhm, 175C max, D2PAK | ON Semiconductor FQB22P10TM
P-Channel MOSFET, QFET® -100V, -22A, 125mΩ
P-Channel 100 V 22 A 125 mOhm Surface Mount Q-FET Mosfet - D2PAK
Trans MOSFET P-CH 100V 22A 3-Pin(2 Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P CH, -100V, -22A, TO-263AB-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.75W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 15.6mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 6V/ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to FQB22P10TM.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
FQB22P10TM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

4 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

QFET®

2002

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

125mOhm

Other Transistors

-100V

MOSFET (Metal Oxide)

GULL WING

-22A

R-PSSO-G2

1

3.75W Ta 125W Tc

Single

ENHANCEMENT MODE

125W

DRAIN

17 ns

P-Channel

SWITCHING

125m Ω @ 11A, 10V

4V @ 250μA

1500pF @ 25V

22A Tc

50nC @ 10V

170ns

10V

±30V

110 ns

60 ns

-22A

-4V

30V

-100V

88A

100V

4.83mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQB27N25TM_AM002

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.13W Ta 180W Tc

-

-

-

-

-

N-Channel

-

110mOhm @ 12.75A, 10V

5V @ 250μA

2450pF @ 25V

25.5A Tc

65nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK (TO-263AB)

250V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQB22P10TM vs FQB27N25TM_AM002
FQB20N06LTM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

-

MOSFET (Metal Oxide)

THROUGH-HOLE

-

R-PSIP-T3

1

3.75W Ta 53W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

SWITCHING

55m Ω @ 10.5A, 10V

2.5V @ 250μA

630pF @ 25V

21A Tc

13nC @ 5V

-

5V 10V

±20V

-

-

-

-

-

-

84A

-

-

-

-

-

-

ROHS3 Compliant

-

-

60V

NO

MATTE TIN

SINGLE

260

unknown

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

TO-262AA

21A

0.07Ohm

60V

170 mJ

FQB22P10TM vs FQB20N06LTM
FQB2N50TM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

-

-

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

3.13W Ta 55W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

5.3 Ω @ 1.05A, 10V

5V @ 250μA

230pF @ 25V

2.1A Tc

8nC @ 10V

-

10V

±30V

-

-

-

-

-

-

8.4A

-

-

-

-

-

-

ROHS3 Compliant

-

-

500V

YES

NOT SPECIFIED

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

-

2.1A

-

500V

120 mJ

FQB22P10TM vs FQB2N50TM