Fairchild/ON Semiconductor FQB20N06TM

Name: FQB20N06TM
Brand: Fairchild/ON Semiconductor
SKU: 3813792-FQB20N06TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQB20N06TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813792-FQB20N06TM

Description:: MOSFET N-CH 60V 20A D2PAK

ECAD Model:

Datasheet:: FQB20N06, FQI20N06

Specifications

Fairchild/ON Semiconductor FQB20N06TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQB20N06TM.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.75W Ta 53W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
590pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.06Ohm
Pulsed Drain Current-Max (IDM)
80A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
155 mJ
RoHS Status
ROHS3 Compliant

Description

FQB20N06TM Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 155 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 590pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 20A.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

FQB20N06TM Features
the avalanche energy rating (Eas) is 155 mJ
based on its rated peak drain current 80A.
a 60V drain to source voltage (Vdss)

FQB20N06TM Applications
There are a lot of Rochester Electronics, LLC
FQB20N06TM applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FQB20N06TM More Descriptions

MOSFET N-CH 60V 20A D2PAK
MOSFETs 60V N-Channel QFET Logic Level
Power Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to FQB20N06TM.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

JEDEC-95 Code

Supplier Device Package

Published

View Compare
FQB20N06TM

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.75W Ta 53W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

60m Ω @ 10A, 10V

4V @ 250μA

590pF @ 25V

20A Tc

15nC @ 10V

60V

10V

±25V

20A

0.06Ohm

80A

60V

155 mJ

ROHS3 Compliant

-

-

-

-
FQB20N06LTM

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

NO

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

THROUGH-HOLE

260

unknown

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.75W Ta 53W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

55m Ω @ 10.5A, 10V

2.5V @ 250μA

630pF @ 25V

21A Tc

13nC @ 5V

60V

5V 10V

±20V

21A

0.07Ohm

84A

60V

170 mJ

ROHS3 Compliant

TO-262AA

-

-

FQB20N06TM vs FQB20N06LTM
FQB2N30TM

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

3.13W Ta 40W Tc

-

-

N-Channel

-

3.7Ohm @ 1.05A, 10V

5V @ 250μA

130pF @ 25V

2.1A Tc

5nC @ 10V

300V

10V

±30V

-

-

-

-

-

-

-

D2PAK (TO-263AB)

2000

FQB20N06TM vs FQB2N30TM
FQB2N50TM

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

-

yes

Obsolete

1 (Unlimited)

2

NOT SPECIFIED

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.13W Ta 55W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.3 Ω @ 1.05A, 10V

5V @ 250μA

230pF @ 25V

2.1A Tc

8nC @ 10V

500V

10V

±30V

2.1A

-

8.4A

500V

120 mJ

ROHS3 Compliant

-

-

-

FQB20N06TM vs FQB2N50TM