Diodes Incorporated FMMT717TA
- Part Number:
- FMMT717TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462906-FMMT717TA
- Description:
- TRANS PNP 12V 2.5A SOT23-3
- Datasheet:
- FMMT717TA
Diodes Incorporated FMMT717TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT717TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-12V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-2.5A
- Frequency110MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT717
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product110MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current2.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic220mV @ 50mA, 2.5A
- Collector Emitter Breakdown Voltage12V
- Transition Frequency110MHz
- Collector Emitter Saturation Voltage-180mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)12V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-2.5A
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT717TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 2.5A volts.
FMMT717TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 110MHz
FMMT717TA Applications
There are a lot of Diodes Incorporated
FMMT717TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 2.5A volts.
FMMT717TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 110MHz
FMMT717TA Applications
There are a lot of Diodes Incorporated
FMMT717TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT717TA More Descriptions
Trans GP BJT PNP 12V 2.5A 625mW Automotive 3-Pin SOT-23 T/R
FMMT717 Series PNP 2.5 A 12 V Surface Mount Silicon Power Transistor - SOT-23
12V 625mW 300@100mA,2V 2.5A PNP SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
PNP transistor, FMMT717 2.5A | Diodes Inc FMMT717TA
Trans, Pnp, -12V, -2.5A, 0.625W; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-12V; Transition Frequency Ft:110Mhz; Power Dissipation Pd:625Mw; Dc Collector Current:-2.5A; Dc Current Gain Hfe:45Hfe; Transistor Case Rohs Compliant: Yes |Diodes Inc. FMMT717TA
FMMT717 Series PNP 2.5 A 12 V Surface Mount Silicon Power Transistor - SOT-23
12V 625mW 300@100mA,2V 2.5A PNP SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
PNP transistor, FMMT717 2.5A | Diodes Inc FMMT717TA
Trans, Pnp, -12V, -2.5A, 0.625W; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-12V; Transition Frequency Ft:110Mhz; Power Dissipation Pd:625Mw; Dc Collector Current:-2.5A; Dc Current Gain Hfe:45Hfe; Transistor Case Rohs Compliant: Yes |Diodes Inc. FMMT717TA
The three parts on the right have similar specifications to FMMT717TA.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPolarityFrequency - TransitionCurrent - Collector (Ic) (Max)Reference StandardConfigurationPower - MaxVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxView Compare
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FMMT717TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors-12V625mWDUALGULL WING260-2.5A110MHz40FMMT71731Single625mWSWITCHING110MHzPNPPNP12V2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V110MHz-180mV12V12V5V-2.5A1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-100V625mWDUALGULL WING260900mA-40FMMT63431Single----NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V900mA1mm3.05mm1.4mm--RoHS CompliantLead FreeMATTE TIN8541.21.00.95unknownR-PDSO-G3Not QualifiedNPN140MHz--------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Other Transistors-12V625mW----2.5A--FMMT7173-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed------2.5A-------
-
13 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99--625mWDUALGULL WING------1--SWITCHING-PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant-Matte Tin (Sn)--R-PDSO-G3--200MHz-AEC-Q101SINGLE625mW0.33 V760ns50ns20pF
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