Diodes Incorporated FMMT634TA
- Part Number:
- FMMT634TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845827-FMMT634TA
- Description:
- TRANS NPN DARL 100V 0.9A SOT23-3
- Datasheet:
- FMMT634TA
Diodes Incorporated FMMT634TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT634TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating900mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT634
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current900mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic960mV @ 5mA, 1A
- Collector Emitter Breakdown Voltage115V
- Collector Emitter Saturation Voltage850mV
- Max Breakdown Voltage100V
- Frequency - Transition140MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)12V
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current900mA
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT634TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 960mV @ 5mA, 1A.Continuous collector voltages of 900mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Its current rating is 900mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 900mA volts.
FMMT634TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 960mV @ 5mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 900mA
FMMT634TA Applications
There are a lot of Diodes Incorporated
FMMT634TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 960mV @ 5mA, 1A.Continuous collector voltages of 900mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Its current rating is 900mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 900mA volts.
FMMT634TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 960mV @ 5mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 900mA
FMMT634TA Applications
There are a lot of Diodes Incorporated
FMMT634TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT634TA More Descriptions
FMMT634 Series 100 V 900 mA NPN Silicon Power Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN DARL 100V 0.9A SOT23-3 / Trans Darlington NPN 100V 0.9A 625mW 3-Pin SOT-23 T/R
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:625mW; DC Collector Current:900mA; DC Current Gain hFE:60000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Av Current Ic:900mA; Collector Emitter Voltage Vces:960mV; Continuous Collector Current Ic Max:900mA; Current Ic @ Vce Sat:930mA; Current Ic Continuous a Max:900mA; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:140MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:15000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulsed Current Icm:5A; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:120V
Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN DARL 100V 0.9A SOT23-3 / Trans Darlington NPN 100V 0.9A 625mW 3-Pin SOT-23 T/R
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:625mW; DC Collector Current:900mA; DC Current Gain hFE:60000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Av Current Ic:900mA; Collector Emitter Voltage Vces:960mV; Continuous Collector Current Ic Max:900mA; Current Ic @ Vce Sat:930mA; Current Ic Continuous a Max:900mA; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:140MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:15000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulsed Current Icm:5A; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:120V
The three parts on the right have similar specifications to FMMT634TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Max Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeReference StandardQualification StatusTransistor ApplicationTransition FrequencyGain Bandwidth ProductJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxView Compare
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FMMT634TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors100V625mWDUALGULL WING260900mA40FMMT63431NPNSingle625mWNPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V850mV100V140MHz120V12V150°C900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-30V330mWDUALGULL WING260300mA40FMMTA1331NPNSingle330mWNPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V---40V10V-300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknownCECCNot QualifiedSWITCHING100MHz---------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----60V500mW---1A-FMMT451---Single-NPN350mV1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V350mV--80V5V-1A1.1mm3mm1.4mmNo SVHC-RoHS CompliantLead Free------150MHz--------
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13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)--625mWDUALGULL WING-----1---PNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V--200MHz---------ROHS3 Compliant---AEC-Q101-SWITCHING200MHz-R-PDSO-G3SINGLE625mWPNP0.33 V760ns50ns20pF
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