Diodes Incorporated FMMT451TC
- Part Number:
- FMMT451TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846862-FMMT451TC
- Description:
- TRANS NPN 60V 1A SOT23-3
- Datasheet:
- FMMT451TC
Diodes Incorporated FMMT451TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT451TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC60V
- Max Power Dissipation500mW
- Current Rating1A
- Base Part NumberFMMT451
- Element ConfigurationSingle
- Gain Bandwidth Product150MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage60V
- Collector Emitter Saturation Voltage350mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FMMT451TC Overview
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 350mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.The maximum collector current is 1A volts.
FMMT451TC Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
FMMT451TC Applications
There are a lot of Diodes Incorporated
FMMT451TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 350mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.The maximum collector current is 1A volts.
FMMT451TC Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
FMMT451TC Applications
There are a lot of Diodes Incorporated
FMMT451TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT451TC More Descriptions
TRANS NPN 60V 1A SOT23-3
The three parts on the right have similar specifications to FMMT451TC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberElement ConfigurationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishSubcategoryPin CountPolarity/Channel TypeCurrent - Collector (Ic) (Max)Transition FrequencyTransistor Element MaterialNumber of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeQualification StatusNumber of ElementsFactory Lead TimeNumber of PinsPublishedPbfree CodePolarityPower DissipationMax Breakdown VoltageFrequency - TransitionMax Junction Temperature (Tj)Radiation HardeningView Compare
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FMMT451TCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)60V500mW1AFMMT451Single150MHzNPN350mV1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V350mV80V5V1A1.1mm3mm1.4mmNo SVHCRoHS CompliantLead Free-------------------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-12V625mW-2.5AFMMT717Single110MHzPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V-180mV-12V5V-2.5A1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Freee3Matte Tin (Sn) - annealedOther Transistors3PNP2.5A80MHz-----------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)80V330mW500mAFMMTA06Single100MHzNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V250mV80V4V500mA1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Freee3MATTE TIN-3NPN-100MHzSILICON3EAR998541.21.00.95DUALGULL WING260unknown40CECC50002-240R-PDSO-G3Not Qualified1----------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJCut Tape (CT)Active1 (Unlimited)100V625mW900mAFMMT634Single-NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V850mV120V12V900mA1.1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead Freee3Matte Tin (Sn) - annealedOther Transistors3---SILICON3EAR99-DUALGULL WING260-40---115 Weeks32006yesNPN625mW100V140MHz150°CNo
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