Diodes Incorporated FMMT717TC
- Part Number:
- FMMT717TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846855-FMMT717TC
- Description:
- TRANS PNP 12V 2.5A SOT23-3
- Datasheet:
- FMMT717TC
Diodes Incorporated FMMT717TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT717TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-12V
- Max Power Dissipation625mW
- Current Rating-2.5A
- Base Part NumberFMMT717
- Pin Count3
- Element ConfigurationSingle
- Gain Bandwidth Product110MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)220mV
- Max Collector Current2.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic220mV @ 50mA, 2.5A
- Collector Emitter Breakdown Voltage12V
- Current - Collector (Ic) (Max)2.5A
- Transition Frequency80MHz
- Collector Emitter Saturation Voltage-180mV
- Collector Base Voltage (VCBO)-12V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-2.5A
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FMMT717TC Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 50mA, 2.5A.Maintaining the continuous collector voltage at -2.5A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2.5A).80MHz is present in the transition frequency.Maximum collector currents can be below 2.5A volts.
FMMT717TC Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 80MHz
FMMT717TC Applications
There are a lot of Diodes Incorporated
FMMT717TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 50mA, 2.5A.Maintaining the continuous collector voltage at -2.5A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2.5A).80MHz is present in the transition frequency.Maximum collector currents can be below 2.5A volts.
FMMT717TC Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 80MHz
FMMT717TC Applications
There are a lot of Diodes Incorporated
FMMT717TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT717TC More Descriptions
Bipolar Transistors - BJT PNP SuperSOT
TRANS PNP 12V 2.5A SOT23-3
TRANS PNP 12V 2.5A SOT23-3
The three parts on the right have similar specifications to FMMT717TC.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeTransistor Element MaterialPublishedNumber of TerminationsECCN CodeTerminal PositionTerminal FormReference StandardJESD-30 CodeNumber of ElementsConfigurationPower - MaxTransistor ApplicationFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxNumber of PinsPbfree CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)PolarityPower DissipationMax Breakdown VoltageMax Junction Temperature (Tj)Radiation HardeningFrequencyView Compare
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FMMT717TCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)Matte Tin (Sn) - annealedOther Transistors-12V625mW-2.5AFMMT7173Single110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V2.5A80MHz-180mV-12V5V-2.5A1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Free-----------------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)Matte Tin (Sn)--625mW-----PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V-200MHz--------ROHS3 Compliant-13 WeeksSILICON20143EAR99DUALGULL WINGAEC-Q101R-PDSO-G31SINGLE625mWSWITCHING200MHz0.33 V760ns50ns20pF----------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJCut Tape (CT)e3Active1 (Unlimited)Matte Tin (Sn) - annealedOther Transistors100V625mW900mAFMMT6343Single--NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V--850mV120V12V900mA1.1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead Free15 WeeksSILICON20063EAR99DUALGULL WING--1---140MHz----3yes26040NPN625mW100V150°CNo-
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)Matte Tin (Sn) - annealed-100V330mW500mAFMMT415-Single40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V-40MHz500mV320V6V500mA1.1mm3mm1.4mmNo SVHCROHS3 CompliantLead Free15 WeeksSILICON20123EAR99DUALGULL WING--1--SWITCHING-----3yes26040NPN330mW100V-No40MHz
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