Diodes Incorporated FMMT415TD
- Part Number:
- FMMT415TD
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845670-FMMT415TD
- Description:
- TRANS NPN 100V 0.5A SOT23-3
- Datasheet:
- FMMT415TD
Diodes Incorporated FMMT415TD technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT415TD.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC100V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency40MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT415
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation330mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product40MHz
- Transistor TypeNPN - Avalanche Mode
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 10mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage100V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)320V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current500mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT415TD Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 10mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
FMMT415TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT415TD Applications
There are a lot of Diodes Incorporated
FMMT415TD applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 10mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
FMMT415TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT415TD Applications
There are a lot of Diodes Incorporated
FMMT415TD applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT415TD More Descriptions
FMMT415 Series NPN 0.5 A 100 V SMT Silicon Avalanche Transistor - SOT-23
Trans GP BJT NPN 100V 0.5A 330mW 3-Pin SOT-23 T/R
Transistor, NPN,500mA,100V, SOT23 | Diodes Inc FMMT415TD
Bipolar Transistors - BJT NPN Avalanche
Trans GP BJT NPN 100V 0.5A 330mW 3-Pin SOT-23 T/R
Transistor, NPN,500mA,100V, SOT23 | Diodes Inc FMMT415TD
Bipolar Transistors - BJT NPN Avalanche
The three parts on the right have similar specifications to FMMT415TD.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryPin CountPolarity/Channel TypeCurrent - Collector (Ic) (Max)Reference StandardJESD-30 CodeConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxMax Junction Temperature (Tj)View Compare
-
FMMT415TD15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V330mWDUALGULL WING260500mA40MHz40FMMT4151NPNSingle330mWSWITCHING40MHzNPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealed-12V625mW----2.5A--FMMT717--Single--110MHzPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeOther Transistors3PNP2.5A----------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)-625mWDUALGULL WING-----1---SWITCHING-PNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant---PNP-AEC-Q101R-PDSO-G3SINGLE625mW200MHz0.33 V760ns50ns20pF-
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT6341NPNSingle625mW--NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeOther Transistors3------140MHz----150°C
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 September 2023
TDA7297 VS TDA7266: What Is The Difference?
In audio equipment, the power amplifier is one of the crucial components. It can amplify low-voltage, low-current signals into high-voltage, high-current signals, thereby increasing output power. Among them,... -
15 September 2023
ATMEGA2560-16AU Footprint, Parameters and Application
Ⅰ. What is ATMEGA2560-16AU?ATMEGA2560-16AU is a powerful MCU microcontroller produced by Microchip Corporation of the United States. It uses the AVR CPU core, combined with a rich instruction... -
15 September 2023
Comparing LM741CN and UA741CN Operational Amplifiers
The two op amps, LM741CN and UA741CN, have similar functional and performance characteristics. They both feature single op amps and similar supply voltages and pinouts. However, they have... -
18 September 2023
TL074CN Symbol, Features and Package
Ⅰ. Overview of TL074CNⅡ. 3D Model and symbol of TL074CNⅢ. Footprint of TL074CNⅣ. Technical parametersⅤ. Features of TL074CNⅥ. Application of TL074CNⅦ. Package of TL074CNⅧ. How to optimize the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.