Diodes Incorporated FMMT591TC
- Part Number:
- FMMT591TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468568-FMMT591TC
- Description:
- TRANS PNP 60V 1A SOT23-3
- Datasheet:
- FMMT591TC
Diodes Incorporated FMMT591TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT591TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation500mW
- Current Rating-1A
- Base Part NumberFMMT591
- Pin Count3
- Element ConfigurationSingle
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)350mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic350mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Current - Collector (Ic) (Max)1A
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-295mV
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-1A
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FMMT591TC Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is -295mV, which allows for maximum design flexibility.When VCE saturation is 350mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -1A for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 150MHz.A maximum collector current of 1A volts can be achieved.
FMMT591TC Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TC Applications
There are a lot of Diodes Incorporated
FMMT591TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is -295mV, which allows for maximum design flexibility.When VCE saturation is 350mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -1A for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 150MHz.A maximum collector current of 1A volts can be achieved.
FMMT591TC Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TC Applications
There are a lot of Diodes Incorporated
FMMT591TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT591TC More Descriptions
Bipolar Transistors - BJT PNP Medium Power
TRANS PNP 60V 1A SOT23-3
TRANS PNP 60V 1A SOT23-3
The three parts on the right have similar specifications to FMMT591TC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsTransistor ApplicationNumber of PinsHTS CodeReach Compliance CodeReference StandardPolarityPower DissipationFactory Lead TimePbfree CodeMax Breakdown VoltageFrequency - TransitionMax Junction Temperature (Tj)Radiation HardeningView Compare
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FMMT591TCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)2006e3Obsolete1 (Unlimited)Matte Tin (Sn) - annealedOther Transistors-60V500mW-1AFMMT5913Single150MHzPNPPNP350mV1A100 @ 500mA 5V100nA350mV @ 100mA, 1A60V1A150MHz-295mV-80V-5V-1A1.02mm3.04mm1.4mmNo SVHCRoHS CompliantLead Free------------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)-e3Obsolete1 (Unlimited)Matte Tin (Sn) - annealed-150V625mW1AFMMT625-Single135MHzNPNNPN300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V-135MHz-150V5V1A1mm3.05mm1.4mmNo SVHCRoHS CompliantLead FreeSILICON3EAR99DUALGULL WING26040R-PDSO-G3Not Qualified1SWITCHING------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)-e3Obsolete1 (Unlimited)MATTE TIN-30V330mW300mAFMMTA133Single--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V-100MHz-40V10V300mA---No SVHCRoHS CompliantLead FreeSILICON3EAR99DUALGULL WING26040-Not Qualified1SWITCHING38541.21.00.95unknownCECCNPN330mW------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJCut Tape (CT)2006e3Active1 (Unlimited)Matte Tin (Sn) - annealedOther Transistors100V625mW900mAFMMT6343Single--NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V--850mV120V12V900mA1.1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead FreeSILICON3EAR99DUALGULL WING26040--1-3---NPN625mW15 Weeksyes100V140MHz150°CNo
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