FDZ208P

Fairchild/ON Semiconductor FDZ208P

Part Number:
FDZ208P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3071145-FDZ208P
Description:
MOSFET P-CH 30V 12.5A BGA
ECAD Model:
Datasheet:
FDZ208P

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Specifications
Fairchild/ON Semiconductor FDZ208P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDZ208P.
  • Mounting Type
    Surface Mount
  • Package / Case
    30-WFBGA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    30
  • Terminal Finish
    NOT SPECIFIED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    30
  • JESD-30 Code
    R-PBGA-B30
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.2W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10.5m Ω @ 12.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.409pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±25V
  • Drain Current-Max (Abs) (ID)
    12.5A
  • Drain-source On Resistance-Max
    0.0105Ohm
  • Pulsed Drain Current-Max (IDM)
    60A
  • DS Breakdown Voltage-Min
    30V
  • RoHS Status
    ROHS3 Compliant
Description
FDZ208P Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.409pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDZ208P Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)


FDZ208P Applications
There are a lot of Rochester Electronics, LLC
FDZ208P applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDZ208P More Descriptions
Trans MOSFET P-CH 30V 12.5A 18-Pin BGA T/R
30V/25V, 10.5/16.5MO, PCH, SINGLE, BGA 3.5X4, 500A GOX, PTII - Bulk
30V, PCH POWER TRENCH BGA MOSFET
MOSFETs 30V/25V, PCh MOSFET BGa
MOSFET, P, SMD, BGA; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:-12.5A; Resistance, Rds On:10.5mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.5V; Case Style:BGA; Termination Type:SMD
Product Comparison
The three parts on the right have similar specifications to FDZ208P.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Supplier Device Package
    Published
    JESD-609 Code
    View Compare
  • FDZ208P
    FDZ208P
    Surface Mount
    30-WFBGA
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    no
    Obsolete
    1 (Unlimited)
    30
    NOT SPECIFIED
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    30
    R-PBGA-B30
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.2W Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    10.5m Ω @ 12.5A, 10V
    3V @ 250μA
    2.409pF @ 15V
    12.5A Ta
    35nC @ 5V
    30V
    4.5V 10V
    ±25V
    12.5A
    0.0105Ohm
    60A
    30V
    ROHS3 Compliant
    -
    -
    -
    -
  • FDZ291P
    Surface Mount
    9-VFBGA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.7W Ta
    -
    P-Channel
    -
    40mOhm @ 4.6A, 4.5V
    1V @ 250μA
    1010pF @ 10V
    4.6A Ta
    13nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    -
    -
    -
    -
    -
    9-BGA (1.5x1.6)
    2006
    -
  • FDZ202P
    Surface Mount
    12-WFBGA
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    no
    Obsolete
    1 (Unlimited)
    12
    TIN SILVER
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    260
    -
    NOT SPECIFIED
    12
    R-PBGA-B12
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2W Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    45m Ω @ 5.5A, 4.5V
    1.5V @ 250μA
    884pF @ 10V
    5.5A Ta
    13nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    5.5A
    0.045Ohm
    20A
    20V
    Non-RoHS Compliant
    -
    -
    e2
  • FDZ298N
    Surface Mount
    9-WFBGA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.7W Ta
    -
    N-Channel
    -
    27mOhm @ 6A, 4.5V
    1.5V @ 250μA
    680pF @ 10V
    6A Ta
    10nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    9-BGA (1.5x1.6)
    2005
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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