Fairchild/ON Semiconductor FDZ208P
- Part Number:
- FDZ208P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3071145-FDZ208P
- Description:
- MOSFET P-CH 30V 12.5A BGA
- Datasheet:
- FDZ208P
Fairchild/ON Semiconductor FDZ208P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDZ208P.
- Mounting TypeSurface Mount
- Package / Case30-WFBGA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations30
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count30
- JESD-30 CodeR-PBGA-B30
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.2W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10.5m Ω @ 12.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.409pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12.5A Ta
- Gate Charge (Qg) (Max) @ Vgs35nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Drain Current-Max (Abs) (ID)12.5A
- Drain-source On Resistance-Max0.0105Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDZ208P Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.409pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDZ208P Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDZ208P Applications
There are a lot of Rochester Electronics, LLC
FDZ208P applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.409pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDZ208P Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDZ208P Applications
There are a lot of Rochester Electronics, LLC
FDZ208P applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDZ208P More Descriptions
Trans MOSFET P-CH 30V 12.5A 18-Pin BGA T/R
30V/25V, 10.5/16.5MO, PCH, SINGLE, BGA 3.5X4, 500A GOX, PTII - Bulk
30V, PCH POWER TRENCH BGA MOSFET
MOSFETs 30V/25V, PCh MOSFET BGa
MOSFET, P, SMD, BGA; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:-12.5A; Resistance, Rds On:10.5mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.5V; Case Style:BGA; Termination Type:SMD
30V/25V, 10.5/16.5MO, PCH, SINGLE, BGA 3.5X4, 500A GOX, PTII - Bulk
30V, PCH POWER TRENCH BGA MOSFET
MOSFETs 30V/25V, PCh MOSFET BGa
MOSFET, P, SMD, BGA; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:-12.5A; Resistance, Rds On:10.5mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.5V; Case Style:BGA; Termination Type:SMD
The three parts on the right have similar specifications to FDZ208P.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusSupplier Device PackagePublishedJESD-609 CodeView Compare
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FDZ208PSurface Mount30-WFBGAYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®noObsolete1 (Unlimited)30NOT SPECIFIEDMOSFET (Metal Oxide)BOTTOMBALLNOT SPECIFIEDunknownNOT SPECIFIED30R-PBGA-B30COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.2W TaENHANCEMENT MODEP-ChannelSWITCHING10.5m Ω @ 12.5A, 10V3V @ 250μA2.409pF @ 15V12.5A Ta35nC @ 5V30V4.5V 10V±25V12.5A0.0105Ohm60A30VROHS3 Compliant----
-
Surface Mount9-VFBGA---55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------1.7W Ta-P-Channel-40mOhm @ 4.6A, 4.5V1V @ 250μA1010pF @ 10V4.6A Ta13nC @ 4.5V20V1.5V 4.5V±8V-----9-BGA (1.5x1.6)2006-
-
Surface Mount12-WFBGAYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®noObsolete1 (Unlimited)12TIN SILVERMOSFET (Metal Oxide)BOTTOMBALL260-NOT SPECIFIED12R-PBGA-B12COMMERCIAL1SINGLE WITH BUILT-IN DIODE2W TaENHANCEMENT MODEP-ChannelSWITCHING45m Ω @ 5.5A, 4.5V1.5V @ 250μA884pF @ 10V5.5A Ta13nC @ 4.5V20V2.5V 4.5V±12V5.5A0.045Ohm20A20VNon-RoHS Compliant--e2
-
Surface Mount9-WFBGA---55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------1.7W Ta-N-Channel-27mOhm @ 6A, 4.5V1.5V @ 250μA680pF @ 10V6A Ta10nC @ 4.5V20V2.5V 4.5V±12V-----9-BGA (1.5x1.6)2005-
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