Fairchild/ON Semiconductor FDZ202P
- Part Number:
- FDZ202P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489798-FDZ202P
- Description:
- MOSFET P-CH 20V 5.5A BGA
- ECAD Model:
-
- Datasheet:
- FDZ202P
Fairchild/ON Semiconductor FDZ202P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDZ202P.
- Mounting TypeSurface Mount
- Package / Case12-WFBGA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee2
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations12
- Terminal FinishTIN SILVER
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count12
- JESD-30 CodeR-PBGA-B12
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds884pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.5A Ta
- Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Drain Current-Max (Abs) (ID)5.5A
- Drain-source On Resistance-Max0.045Ohm
- Pulsed Drain Current-Max (IDM)20A
- DS Breakdown Voltage-Min20V
- RoHS StatusNon-RoHS Compliant
FDZ202P Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 884pF @ 10V.5.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 20A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
FDZ202P Features
based on its rated peak drain current 20A.
a 20V drain to source voltage (Vdss)
FDZ202P Applications
There are a lot of Rochester Electronics, LLC
FDZ202P applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 884pF @ 10V.5.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 20A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
FDZ202P Features
based on its rated peak drain current 20A.
a 20V drain to source voltage (Vdss)
FDZ202P Applications
There are a lot of Rochester Electronics, LLC
FDZ202P applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FDZ202P More Descriptions
-20V,5.5A, PCH,2.5V,SPECIFIED POWER TRENCH BGA MOSFET
TRANS MOSFET P-CH 20V 5.5A 12BGA - Bulk
French Electronic Distributor since 1988
TRANS MOSFET P-CH 20V 5.5A 12BGA - Bulk
French Electronic Distributor since 1988
The three parts on the right have similar specifications to FDZ202P.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusSupplier Device PackagePublishedReach Compliance CodeView Compare
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FDZ202PSurface Mount12-WFBGAYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e2noObsolete1 (Unlimited)12TIN SILVERMOSFET (Metal Oxide)BOTTOMBALL260NOT SPECIFIED12R-PBGA-B12COMMERCIAL1SINGLE WITH BUILT-IN DIODE2W TaENHANCEMENT MODEP-ChannelSWITCHING45m Ω @ 5.5A, 4.5V1.5V @ 250μA884pF @ 10V5.5A Ta13nC @ 4.5V20V2.5V 4.5V±12V5.5A0.045Ohm20A20VNon-RoHS Compliant---- -
Surface Mount9-VFBGA---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---------1.7W Ta-P-Channel-40mOhm @ 4.6A, 4.5V1V @ 250μA1010pF @ 10V4.6A Ta13nC @ 4.5V20V1.5V 4.5V±8V-----9-BGA (1.5x1.6)2006-
-
Surface Mount9-VFBGAYESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e2yesObsolete1 (Unlimited)9TIN SILVERMOSFET (Metal Oxide)BOTTOMBALL260NOT SPECIFIED9R-PBGA-B9COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.7W TaENHANCEMENT MODEN-ChannelSWITCHING23m Ω @ 6A, 4.5V1.5V @ 250μA670pF @ 10V6A Ta10nC @ 4.5V20V2.5V 4.5V±12V6A0.034Ohm10A20VROHS3 Compliant--unknown
-
Surface Mount9-WFBGA---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---------1.6W Ta-N-Channel-18mOhm @ 7.5A, 4.5V1.5V @ 250μA1127pF @ 10V7.5A Ta15nC @ 4.5V20V2.5V 4.5V±12V-----9-BGA (2x2.1)2005-
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