Fairchild/ON Semiconductor FDY100PZ

Name: FDY100PZ
Brand: Fairchild/ON Semiconductor
SKU: 3070130-FDY100PZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDY100PZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070130-FDY100PZ

Description:: MOSFET P-CH 20V 350MA SC-89

ECAD Model:

Datasheet:: FDY100PZ

Specifications

Fairchild/ON Semiconductor FDY100PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDY100PZ.

Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
1.2Ohm
Terminal Finish
Tin (Sn)
Additional Feature
ESD PROTECTION
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Number of Elements
1
Power Dissipation-Max
625mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
625mW
Turn On Delay Time
6 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
100pF @ 10V
Current - Continuous Drain (Id) @ 25°C
350mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 4.5V
Rise Time
13ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
350mA
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Nominal Vgs
-1 V
Height
780μm
Length
1.7mm
Width
980μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDY100PZ Description
FDY100PZ belongs to the family of single P-channel PowerTrench? MOSFETs which are provided by ON Semiconductor based on the advanced power trench process to optimize the RDS (on) @ VGS = 2.5 V. Due to its specific features, it is ideally suitable for Li-lon battery pack.

FDY100PZ Features
Advanced power trench process
ESD protection diode
RoHS compliant

FDY100PZ Applications
Li-lon battery pack

FDY100PZ More Descriptions

P-Channel (- 2.5V) Specified PowerTrench® MOSFET -20V, -0.35A, 1.2Ω
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = -2.5v.
MOSFET, P, SMD, SC89; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:0.35A; Resistance, Rds On:1.2ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1V; Case Style:SC-89; ;RoHS Compliant: Yes

Certification