Fairchild/ON Semiconductor FDW256P

Name: FDW256P
Brand: Fairchild/ON Semiconductor
SKU: 2489824-FDW256P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDW256P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2489824-FDW256P

Description:: MOSFET P-CH 30V 8A 8-TSSOP

ECAD Model:

Datasheet:: FDW256P

Specifications

Fairchild/ON Semiconductor FDW256P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDW256P.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Current Rating
-8A
Number of Elements
1
Power Dissipation-Max
1.3W Ta
Power Dissipation
1.3W
Turn On Delay Time
15 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
13.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2267pF @ 15V
Current - Continuous Drain (Id) @ 25°C
8A Ta
Gate Charge (Qg) (Max) @ Vgs
38nC @ 5V
Rise Time
11ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
78 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Nominal Vgs
1.7 V
Height
1mm
Length
3mm
Width
4.4mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FDW256P Description This P-channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V). FDW256P Applications
· Battery protection · DC/DC conversion · Power management · Load switch FDW256P Features
· –8 A, –30 V RDS(ON) = 13.5 mW @ VGS = –10 V RDS(ON) = 20 mW @ VGS = –4.5 V · Extended VGSS range (±25V) for battery applications · High performance trench technology for extremely low RDS(ON) · Low profile TSSOP-8 package

FDW256P More Descriptions

Trans MOSFET P-CH 30V 8A 8-Pin TSSOP W T/R
MOSFETs TSSOP8, SINGLE, PCH
MOSFET, P, SMD, TSSOP-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSSOP; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:2267pF; Current Id Max:-8A; Package / Case:TSSOP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:50A; SMD Marking:256P; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-25V; Voltage Vgs Rds on Measurement:-10V

Certification