Fairchild/ON Semiconductor FDW254P
- Part Number:
- FDW254P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489677-FDW254P
- Description:
- MOSFET P-CH 20V 9.2A 8-TSSOP
- ECAD Model:
-
- Datasheet:
- FDW254P
Fairchild/ON Semiconductor FDW254P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDW254P.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Supplier Device Package8-TSSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance12MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-9.2A
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs12mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5878pF @ 10V
- Current - Continuous Drain (Id) @ 25°C9.2A Ta
- Gate Charge (Qg) (Max) @ Vgs96nC @ 4.5V
- Rise Time15ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time210 ns
- Continuous Drain Current (ID)9.2A
- Threshold Voltage600mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance5.878nF
- Drain to Source Resistance12mOhm
- Rds On Max12 mΩ
- Height1mm
- Length3mm
- Width4.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDW254P Description
FDW254P is a kind of P-channel 1.8 V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench process for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FDW254P Features
Low gate charge
Extremely low RDS (on)
Available in the TSSOP-8 package
High-performance trench technology
A wide range of gate drive voltage (2.5V – 12V)
FDW254P Applications
Motor drive
Load switch
DC/DC conversion
Power management
FDW254P is a kind of P-channel 1.8 V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench process for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FDW254P Features
Low gate charge
Extremely low RDS (on)
Available in the TSSOP-8 package
High-performance trench technology
A wide range of gate drive voltage (2.5V – 12V)
FDW254P Applications
Motor drive
Load switch
DC/DC conversion
Power management
FDW254P More Descriptions
Trans MOSFET P-CH 20V 9.2A 8-Pin TSSOP W T/R
MOSFET, P, SMD, TSSOP-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:9.2A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:0.6V; Case Style:TSSOP; ;RoHS Compliant: Yes
MOSFET, P, SMD, TSSOP-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 1.3W; Transistor Case Style: TSSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Capacitance Ciss Typ: 5878pF; Current Id Max: -9.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 50A; SMD Marking: 254P; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -8V; Voltage Vgs Rds on Measurement: -4.5V
MOSFET, P, SMD, TSSOP-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:9.2A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:0.6V; Case Style:TSSOP; ;RoHS Compliant: Yes
MOSFET, P, SMD, TSSOP-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 1.3W; Transistor Case Style: TSSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Capacitance Ciss Typ: 5878pF; Current Id Max: -9.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 50A; SMD Marking: 254P; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -8V; Voltage Vgs Rds on Measurement: -4.5V
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