Fairchild/ON Semiconductor FDU3N40TU

FDU3N40TU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 225pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [10 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 8A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDU3N40TU Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 8A.


FDU3N40TU Applications
There are a lot of ON Semiconductor
FDU3N40TU applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies