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FDT86246

Fairchild/ON Semiconductor FDT86246

Part Number:
FDT86246
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481639-FDT86246
Description:
MOSFET N-CH 150V 2A SOT-223
ECAD Model:
Datasheet:
FDT86246

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Specifications
Fairchild/ON Semiconductor FDT86246 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT86246.
  • Lifecycle Status
    ACTIVE (Last Updated: 12 hours ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.2mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    2.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    236m Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    215pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 10V
  • Rise Time
    2.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    1.2 ns
  • Turn-Off Delay Time
    4.6 ns
  • Continuous Drain Current (ID)
    2A
  • Threshold Voltage
    3.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain-source On Resistance-Max
    0.236Ohm
  • Drain to Source Breakdown Voltage
    150V
  • Nominal Vgs
    3.1 V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1.7mm
  • Length
    3.7mm
  • Width
    6.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDT86246  Description
The N-Channel MOSFET FDT86246 is manufactured using Fairchild's advanced power groove process, which has been optimized for IOS (on) switch performance and ruggedness.   FDT86246  Features   Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant     FDT86246  Applications   This product is general usage and suitable for many different applications. Load Switch Primary Switch
FDT86246 More Descriptions
N-Channel Power Trench® MOSFET 150V, 2A, 236mΩ
Trans MOSFET N-CH 150V 2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, N CH, 150V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:8A; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to FDT86246.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Lead Free
    Contact Plating
    View Compare
  • FDT86246
    FDT86246
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 12 hours ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    7.8 ns
    N-Channel
    SWITCHING
    236m Ω @ 2A, 10V
    4V @ 250μA
    215pF @ 75V
    2A Ta
    4nC @ 10V
    2.3ns
    6V 10V
    ±20V
    1.2 ns
    4.6 ns
    2A
    3.1V
    20V
    2A
    0.236Ohm
    150V
    3.1 V
    5 pF
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • FDT86246L
    FDT86246L
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 13 hours ago)
    4 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    250.2mg
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1W Ta
    Single
    -
    -
    -
    -
    N-Channel
    -
    228m Ω @ 2A, 10V
    2.5V @ 250μA
    335pF @ 75V
    2A Ta
    6.3nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    8541.29.00.95
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    150V
    -
    -
    FDT86246 vs FDT86246L
  • FDT86244
    FDT86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 12 hours ago)
    9 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    128m Ω @ 2.8A, 10V
    4V @ 250μA
    395pF @ 75V
    2.8A Tc
    7nC @ 10V
    1.3ns
    6V 10V
    ±20V
    2.4 ns
    9.8 ns
    2.8A
    3.1V
    20V
    -
    -
    150V
    3.1 V
    5 pF
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    Lead Free
    -
    FDT86246 vs FDT86244
  • FDT86113LZ
    FDT86113LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 12 hours ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    -
    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    3.8 ns
    N-Channel
    SWITCHING
    100m Ω @ 3.3A, 10V
    2.5V @ 250μA
    315pF @ 50V
    3.3A Tc
    6.8nC @ 10V
    1.3ns
    4.5V 10V
    ±20V
    1.5 ns
    10 ns
    3.3A
    1.7V
    20V
    -
    -
    100V
    -
    5 pF
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    Lead Free
    Tin
    FDT86246 vs FDT86113LZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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