Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDT86102LZ
FDT86102LZ

Fairchild/ON Semiconductor FDT86102LZ

Part Number:
FDT86102LZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478195-FDT86102LZ
Description:
MOSFET N-CH 100V 6.6A SOT-223
ECAD Model:
Datasheet:
FDT86102LZ

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDT86102LZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT86102LZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 11 hours ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.2mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1490pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    1.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.2 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    6.6A
  • Threshold Voltage
    1.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.028Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.8mm
  • Length
    3.7mm
  • Width
    6.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDT86102LZ    Description    The N-channel MOSFET uses an advanced PowerTritch manufacturing process that is customized to minimize on-resistance and switching loss. Gmurs Zener is added to improve the ESD voltage level.   FDT86102LZ     Features   Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Tested RoHS Compliant
FDT86102LZ      Applications
This product is general usage and suitable for many different applications. DC-DC Conversion Inverter Synchronous Rectifier    

 

FDT86102LZ More Descriptions
N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ
Trans MOSFET N-CH 100V 6.6A 4-Pin(3 Tab) SOT-223 T/R
FDT86102LZ Series 100 V 6.6 A 28 mOhm N-Channel PowerTrench® MOSFET - SOT-223
Trans MOSFET N-CH 100V 6.6A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
100V 6.6A 22m´Î@10V6.6A 2.2W 1.4V@250uA 7.5pF@50V N Channel 1.118nF@50V 8.3nC@4.5V -55¡Í~ 150¡Í@(Tj) SOT-223 MOSFETs ROHS
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
MOSFET, N CH, 100V, 6.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C; Pulse Current Idm:40A; Voltage Vgs th Max:3V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 28 / Gate-Source Voltage V = 20 / Fall Time ns = 2.2 / Rise Time ns = 1.9 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.2
Product Comparison
The three parts on the right have similar specifications to FDT86102LZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Contact Plating
    View Compare
  • FDT86102LZ
    FDT86102LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1
    2.2W Ta
    Single
    ENHANCEMENT MODE
    1W
    DRAIN
    6.6 ns
    N-Channel
    SWITCHING
    28m Ω @ 6.6A, 10V
    3V @ 250μA
    1490pF @ 50V
    6.6A Ta
    25nC @ 10V
    1.9ns
    4.5V 10V
    ±20V
    2.2 ns
    19 ns
    6.6A
    1.4V
    20V
    0.028Ohm
    100V
    150°C
    1.8mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDT86244
    FDT86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 12 hours ago)
    9 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    128m Ω @ 2.8A, 10V
    4V @ 250μA
    395pF @ 75V
    2.8A Tc
    7nC @ 10V
    1.3ns
    6V 10V
    ±20V
    2.4 ns
    9.8 ns
    2.8A
    3.1V
    20V
    -
    150V
    -
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ULTRA-LOW RESISTANCE
    3.1 V
    5 pF
    -
    FDT86102LZ vs FDT86244
  • FDT86106LZ
    FDT86106LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    3.8 ns
    N-Channel
    SWITCHING
    108m Ω @ 3.2A, 10V
    2.2V @ 250μA
    315pF @ 50V
    3.2A Ta
    7nC @ 10V
    1.3ns
    4.5V 10V
    ±20V
    1.5 ns
    10 ns
    3.2A
    1.5V
    20V
    -
    100V
    -
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    -
    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    1.5 V
    5 pF
    -
    FDT86102LZ vs FDT86106LZ
  • FDT86113LZ
    FDT86113LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 12 hours ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.2mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    -
    2.2W Ta
    Single
    ENHANCEMENT MODE
    2.2W
    DRAIN
    3.8 ns
    N-Channel
    SWITCHING
    100m Ω @ 3.3A, 10V
    2.5V @ 250μA
    315pF @ 50V
    3.3A Tc
    6.8nC @ 10V
    1.3ns
    4.5V 10V
    ±20V
    1.5 ns
    10 ns
    3.3A
    1.7V
    20V
    -
    100V
    -
    1.7mm
    3.7mm
    6.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    -
    5 pF
    Tin
    FDT86102LZ vs FDT86113LZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDT86102LZ
Popular Search Part Number Related Keywords Search Tags

Latest News

  • 07 November 2023

    TLP250 MOSFET IGBT Driver: Manufacturer, Footprint and Applications

    Ⅰ. Overview of TLP250Ⅱ. Manufacturer of TLP250Ⅲ. TLP250 symbol, footprint and pin configurationⅣ. What are the features of TLP250?Ⅴ. Technical parameters of TLP250Ⅵ. How to use TLP250 isolated...
  • 07 November 2023

    LM2596 Voltage Regulator: Equivalents, Features, Structure and Applications

    Ⅰ. What is a voltage regulator?Ⅱ. Overview of LM2596 voltage regulatorⅢ. Features of LM2596 voltage regulatorⅣ. Pin configuration of LM2596 voltage regulatorⅤ. Structure of LM2596 voltage regulatorⅥ. LM2596...
  • 08 November 2023

    What is MOC3021 Optocoupler Triac Driver?

    Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3021 optocouplerⅢ. Pin configuration of MOC3021 optocouplerⅣ. Features of MOC3021 optocouplerⅤ. Technical parameters of MOC3021 optocouplerⅥ. Working principle of MOC3021 optocouplerⅦ....
  • 08 November 2023

    LM324 vs LM358: What is the Difference Between Them?

    Ⅰ. What is an operational amplifier?Ⅱ. Overview of LM324Ⅲ. Overview of LM358Ⅳ. LM324 vs LM358: FeaturesⅤ. LM324 vs LM358: Technical parametersⅥ. LM324 vs LM358: Pin configurationⅦ. LM324 vs...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.