Fairchild/ON Semiconductor FDS8958A_F085
- Part Number:
- FDS8958A_F085
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847685-FDS8958A_F085
- Description:
- MOSFET N/P-CH 30V 7A/5A 8SOIC
- Datasheet:
- FDS8958A_F085
Fairchild/ON Semiconductor FDS8958A_F085 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8958A_F085.
- Vgs(th) (Max) @ Id:3V @ 250µA
- Supplier Device Package:8-SO
- Series:Automotive, AEC-Q101, PowerTrench®
- Rds On (Max) @ Id, Vgs:28 mOhm @ 7A, 10V
- Power - Max:900mW
- Packaging:Tape & Reel (TR)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:575pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:7A, 5A
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FDS8958A_F085 More Descriptions
Trans MOSFET N/P-CH 30V 7A/5A Automotive 8-Pin SOIC T/R
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to FDS8958A_F085.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Lifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormNumber of ElementsOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingElement ConfigurationTurn On Delay TimeDrain to Source Voltage (Vdss)Voltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)View Compare
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FDS8958A_F0853V @ 250µA8-SOAutomotive, AEC-Q101, PowerTrench®28 mOhm @ 7A, 10V900mWTape & Reel (TR)8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount575pF @ 15V16nC @ 10VN and P-ChannelLogic Level Gate30V7A, 5A--------------------------------------------------------------
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---------------ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)8SMD/SMTEAR9917mOhmTin (Sn)Other Transistors900mWDUALGULL WING2ENHANCEMENT MODE2WN and P-ChannelSWITCHING17m Ω @ 8.6A, 10V3V @ 250μA1205pF @ 15V8.6A 7.3A24nC @ 10V10nsN-CHANNEL AND P-CHANNEL16 ns33 ns8.6A1.6V25V-60V30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-------
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---------------ACTIVE (Last Updated: 1 week ago)10 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg--55°C~150°C TJTape & Reel (TR)PowerTrench®2001--Active1 (Unlimited)---18MOhm--1.6W--2-1.6W2 N-Channel (Dual)-18m Ω @ 7.5A, 10V2.5V @ 250μA1270pF @ 15V-26nC @ 10V37ns-37 ns48 ns7.5A2.5V20V30V--Logic Level Gate-1.5mm5mm4mmNo SVHC-ROHS3 CompliantLead FreeTinDual7 ns30V---
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---------------ACTIVE (Last Updated: 6 days ago)12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)8SMD/SMTEAR9929mOhm-FET General Purpose Power2W-GULL WING2ENHANCEMENT MODE2W2 N-Channel (Dual)-29m Ω @ 6A, 10V3V @ 250μA955pF @ 20V-11nC @ 5V5ns-3 ns23 ns6A1.9V20V40V40VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.9 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead FreeTinDual9 ns-40V6A6A
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