Fairchild/ON Semiconductor FDS8935
- Part Number:
- FDS8935
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473657-FDS8935
- Description:
- MOSFET 2P-CH 80V 2.1A 8SOIC
- Datasheet:
- FDS8935
Fairchild/ON Semiconductor FDS8935 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8935.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time11 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation3.1W
- Terminal FormGULL WING
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- Turn On Delay Time5 ns
- Power - Max1.6W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs183m Ω @ 2.1A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds879pF @ 40V
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time3ns
- Drain to Source Voltage (Vdss)80V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)2.1A
- Threshold Voltage-1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-80V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs-1.8 V
- Feedback Cap-Max (Crss)36 pF
- Height1.5mm
- Length4mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDS8935 Description
This P-channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from ON Semiconductor, which has been tuned for rDS(on), switching performance, and robustness.
FDS8935 Features
Maximum rDS(on) at -10 V, -2.1 A is 183 m.
Maximum rDS(on) is 247 m at -4.5 V and -1.9 A.
Extremely low rDS(on) with high performance trench technology
Ability to handle high power and current in a popular surface mount package
completely UIL tested
FDS8935 Applications
The load switch
Chronoscopic Rectifier
This P-channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from ON Semiconductor, which has been tuned for rDS(on), switching performance, and robustness.
FDS8935 Features
Maximum rDS(on) at -10 V, -2.1 A is 183 m.
Maximum rDS(on) is 247 m at -4.5 V and -1.9 A.
Extremely low rDS(on) with high performance trench technology
Ability to handle high power and current in a popular surface mount package
completely UIL tested
FDS8935 Applications
The load switch
Chronoscopic Rectifier
FDS8935 More Descriptions
Dual P-Channel -80 V 247 mOhm 19 nC 3.1 W PowerTrench Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 80V 2.1A 8-Pin SOIC T/R
Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Transistor MOSFET Array Dual P-CH 80V 2.1A 8-Pin SOIC T/R
Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The three parts on the right have similar specifications to FDS8935.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal FormNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusPublishedJESD-609 CodeTerminationResistanceTerminal FinishTerminal PositionCurrent - Continuous Drain (Id) @ 25°CPolarity/Channel TypeDual Supply VoltageLead FreeContact PlatingVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)View Compare
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FDS8935ACTIVE (Last Updated: 6 days ago)11 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesActive1 (Unlimited)8EAR99Other Transistors3.1WGULL WING2DualENHANCEMENT MODE3.1W5 ns1.6W2 P-Channel (Dual)SWITCHING183m Ω @ 2.1A, 10V3V @ 250μA879pF @ 40V19nC @ 10V3ns80V3 ns22 ns2.1A-1.8V20V-80VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-1.8 V36 pF1.5mm4mm5mmNo SVHCNoROHS3 Compliant---------------
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ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesActive1 (Unlimited)8EAR99Other Transistors900mWGULL WING2-ENHANCEMENT MODE2W--N and P-ChannelSWITCHING17m Ω @ 8.6A, 10V3V @ 250μA1205pF @ 15V24nC @ 10V10ns-16 ns33 ns8.6A1.6V25V-60VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.6 V-1.5mm5mm4mmNo SVHCNoROHS3 Compliant2006e3SMD/SMT17mOhmTin (Sn)DUAL8.6A 7.3AN-CHANNEL AND P-CHANNEL30VLead Free----
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ACTIVE (Last Updated: 1 week ago)10 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg--55°C~150°C TJTape & Reel (TR)PowerTrench®-Active1 (Unlimited)---1.6W-2Dual-1.6W7 ns-2 N-Channel (Dual)-18m Ω @ 7.5A, 10V2.5V @ 250μA1270pF @ 15V26nC @ 10V37ns30V37 ns48 ns7.5A2.5V20V30V-Logic Level Gate--1.5mm5mm4mmNo SVHC-ROHS3 Compliant2001--18MOhm-----Lead FreeTin---
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ACTIVE (Last Updated: 6 days ago)12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesActive1 (Unlimited)8EAR99FET General Purpose Power2WGULL WING2DualENHANCEMENT MODE2W9 ns-2 N-Channel (Dual)-29m Ω @ 6A, 10V3V @ 250μA955pF @ 20V11nC @ 5V5ns-3 ns23 ns6A1.9V20V40VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.9 V-1.5mm5mm4mmNo SVHCNoROHS3 Compliant2006e3SMD/SMT29mOhm----40VLead FreeTin40V6A6A
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