FDS8935

Fairchild/ON Semiconductor FDS8935

Part Number:
FDS8935
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473657-FDS8935
Description:
MOSFET 2P-CH 80V 2.1A 8SOIC
ECAD Model:
Datasheet:
FDS8935

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Specifications
Fairchild/ON Semiconductor FDS8935 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8935.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    11 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    3.1W
  • Terminal Form
    GULL WING
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Turn On Delay Time
    5 ns
  • Power - Max
    1.6W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    183m Ω @ 2.1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    879pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    3ns
  • Drain to Source Voltage (Vdss)
    80V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    2.1A
  • Threshold Voltage
    -1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -80V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -1.8 V
  • Feedback Cap-Max (Crss)
    36 pF
  • Height
    1.5mm
  • Length
    4mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDS8935 Description
This P-channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from ON Semiconductor, which has been tuned for rDS(on), switching performance, and robustness.

FDS8935 Features
Maximum rDS(on) at -10 V, -2.1 A is 183 m.
Maximum rDS(on) is 247 m at -4.5 V and -1.9 A.
Extremely low rDS(on) with high performance trench technology
Ability to handle high power and current in a popular surface mount package
completely UIL tested

FDS8935 Applications
The load switch
Chronoscopic Rectifier
FDS8935 More Descriptions
Dual P-Channel -80 V 247 mOhm 19 nC 3.1 W PowerTrench Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 80V 2.1A 8-Pin SOIC T/R
Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDS8935.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Form
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Published
    JESD-609 Code
    Termination
    Resistance
    Terminal Finish
    Terminal Position
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    Dual Supply Voltage
    Lead Free
    Contact Plating
    Voltage - Rated DC
    Current Rating
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDS8935
    FDS8935
    ACTIVE (Last Updated: 6 days ago)
    11 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Other Transistors
    3.1W
    GULL WING
    2
    Dual
    ENHANCEMENT MODE
    3.1W
    5 ns
    1.6W
    2 P-Channel (Dual)
    SWITCHING
    183m Ω @ 2.1A, 10V
    3V @ 250μA
    879pF @ 40V
    19nC @ 10V
    3ns
    80V
    3 ns
    22 ns
    2.1A
    -1.8V
    20V
    -80V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -1.8 V
    36 pF
    1.5mm
    4mm
    5mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS8858CZ
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Other Transistors
    900mW
    GULL WING
    2
    -
    ENHANCEMENT MODE
    2W
    -
    -
    N and P-Channel
    SWITCHING
    17m Ω @ 8.6A, 10V
    3V @ 250μA
    1205pF @ 15V
    24nC @ 10V
    10ns
    -
    16 ns
    33 ns
    8.6A
    1.6V
    25V
    -60V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.6 V
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    2006
    e3
    SMD/SMT
    17mOhm
    Tin (Sn)
    DUAL
    8.6A 7.3A
    N-CHANNEL AND P-CHANNEL
    30V
    Lead Free
    -
    -
    -
    -
  • FDS8978
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    Active
    1 (Unlimited)
    -
    -
    -
    1.6W
    -
    2
    Dual
    -
    1.6W
    7 ns
    -
    2 N-Channel (Dual)
    -
    18m Ω @ 7.5A, 10V
    2.5V @ 250μA
    1270pF @ 15V
    26nC @ 10V
    37ns
    30V
    37 ns
    48 ns
    7.5A
    2.5V
    20V
    30V
    -
    Logic Level Gate
    -
    -
    1.5mm
    5mm
    4mm
    No SVHC
    -
    ROHS3 Compliant
    2001
    -
    -
    18MOhm
    -
    -
    -
    -
    -
    Lead Free
    Tin
    -
    -
    -
  • FDS8949
    ACTIVE (Last Updated: 6 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    2W
    GULL WING
    2
    Dual
    ENHANCEMENT MODE
    2W
    9 ns
    -
    2 N-Channel (Dual)
    -
    29m Ω @ 6A, 10V
    3V @ 250μA
    955pF @ 20V
    11nC @ 5V
    5ns
    -
    3 ns
    23 ns
    6A
    1.9V
    20V
    40V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.9 V
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    2006
    e3
    SMD/SMT
    29mOhm
    -
    -
    -
    -
    40V
    Lead Free
    Tin
    40V
    6A
    6A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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