Fairchild/ON Semiconductor FDS8926A

Name: FDS8926A
Brand: Fairchild/ON Semiconductor
SKU: 2477981-FDS8926A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8926A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477981-FDS8926A

Description:: MOSFET 2N-CH 30V 5.5A 8-SO

ECAD Model:

Datasheet:: FDS8926A

Specifications

Fairchild/ON Semiconductor FDS8926A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8926A.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Voltage - Rated DC
30V
Max Power Dissipation
900mW
Current Rating
5.5A
Number of Elements
2
Element Configuration
Dual
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
30m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Rise Time
19ns
Fall Time (Typ)
13 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
5.5A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
FET Feature
Logic Level Gate
Nominal Vgs
670 mV
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FDS8926A Description
The high cell density, DMOS technology developed by Fairchild is used to create SO-8 N-Channel enhancement mode power field effect transistors. The on-state resistance is kept to a minimum and switching performance is higher because to this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and disk drive motor control where quick switching, minimal in-line power loss, and transient resistance are required.

FDS8926A Features
Design of high density cells for incredibly low RDS (ON).
combine high breakdown voltage of 30 V with low gate threshold (totally improved at 2.5V).
a surface mount package with high power and current handling capacity.
Surface-mount package housing two MOSFETs.

FDS8926A Applications
Switching applications

FDS8926A More Descriptions

Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Bulk
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 28nC @ 4.5V 5.5A 900mW 13ns
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
TRANSISTOR, MOSFET; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 670mV; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 5.5A; Current Id Max: 5.5A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.025ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 8V; Voltage Vgs Rds on Measurement: 4.5V

Product Comparison

The three parts on the right have similar specifications to FDS8926A.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Feature

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Operating Mode

Transistor Application

Current - Continuous Drain (Id) @ 25°C

Polarity/Channel Type

Threshold Voltage

Drain Current-Max (Abs) (ID)

FET Technology

Height

Length

Width

Contact Plating

Max Operating Temperature

Min Operating Temperature

Power - Max

Avalanche Energy Rating (Eas)

View Compare
FDS8926A

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

-55°C~150°C TJ

Tape & Reel (TR)

1998

Obsolete

1 (Unlimited)

SMD/SMT

30V

900mW

5.5A

2

Dual

2W

2 N-Channel (Dual)

30m Ω @ 5.5A, 4.5V

1V @ 250μA

900pF @ 10V

28nC @ 4.5V

19ns

13 ns

42 ns

5.5A

8V

30V

30V

Logic Level Gate

670 mV

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS8958B

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-55°C~150°C TJ

Tape & Reel (TR)

2017

Active

1 (Unlimited)

-

-

900mW

-

2

-

1.6W

N and P-Channel

26m Ω @ 6.4A, 10V

3V @ 250μA

540pF @ 15V

12nC @ 10V

6ns

6 ns

17 ns

4.5A

25V

30V

-

Logic Level Gate

-

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 week ago)

18 Weeks

SILICON

PowerTrench®

e3

yes

8

EAR99

26MOhm

Tin (Sn)

Other Transistors

DUAL

GULL WING

ENHANCEMENT MODE

SWITCHING

6.4A 4.5A

N-CHANNEL AND P-CHANNEL

2V

6.4A

METAL-OXIDE SEMICONDUCTOR

1.575mm

4.9mm

3.9mm

-

-

-

-

-

FDS8926A vs FDS8958B
FDS8858CZ

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-55°C~150°C TJ

Tape & Reel (TR)

2006

Active

1 (Unlimited)

SMD/SMT

-

900mW

-

2

-

2W

N and P-Channel

17m Ω @ 8.6A, 10V

3V @ 250μA

1205pF @ 15V

24nC @ 10V

10ns

16 ns

33 ns

8.6A

25V

-60V

30V

Logic Level Gate

1.6 V

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 2 days ago)

18 Weeks

SILICON

PowerTrench®

e3

yes

8

EAR99

17mOhm

Tin (Sn)

Other Transistors

DUAL

GULL WING

ENHANCEMENT MODE

SWITCHING

8.6A 7.3A

N-CHANNEL AND P-CHANNEL

1.6V

-

METAL-OXIDE SEMICONDUCTOR

1.5mm

5mm

4mm

-

-

-

-

-

FDS8926A vs FDS8858CZ
FDS8958A

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

Tape & Reel (TR)

2007

Active

1 (Unlimited)

SMD/SMT

-

2W

7A

2

-

2W

N and P-Channel

28m Ω @ 7A, 10V

3V @ 250μA

575pF @ 15V

16nC @ 10V

13ns

9 ns

14 ns

7A

20V

30V

30V

Logic Level Gate

1.9 V

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 15 hours ago)

18 Weeks

-

PowerTrench®

e3

yes

8

-

28mOhm

-

-

DUAL

GULL WING

ENHANCEMENT MODE

SWITCHING

7A 5A

N-CHANNEL AND P-CHANNEL

1.9V

7A

METAL-OXIDE SEMICONDUCTOR

1.5mm

5mm

4mm

Tin

150°C

-55°C

900mW

54 mJ

FDS8926A vs FDS8958A