Fairchild/ON Semiconductor FDPF18N50
- Part Number:
- FDPF18N50
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849017-FDPF18N50
- Description:
- MOSFET N-CH 500V 18A TO-220F
- Datasheet:
- FDPF18N50
Fairchild/ON Semiconductor FDPF18N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF18N50.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time9 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET™
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance265MOhm
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max38.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation38.5W
- Case ConnectionISOLATED
- Turn On Delay Time55 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs265m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time165ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)90 ns
- Turn-Off Delay Time95 ns
- Continuous Drain Current (ID)18A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)72A
- Avalanche Energy Rating (Eas)945 mJ
- Height9.19mm
- Length10.16mm
- Width4.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDPF18N50 Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX, and electronic
lamp ballasts
FDPF18N50 Features RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested
FDPF18N50 Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply
FDPF18N50 Features RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested
FDPF18N50 Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply
FDPF18N50 More Descriptions
N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F
Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 500V 18A TO-220F
500V 18A 58W 265m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N-CH, 500V, 18A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 500V 18A TO-220F
500V 18A 58W 265m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N-CH, 500V, 18A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF18N50.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Terminal FinishRadiation HardeningView Compare
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FDPF18N50ACTIVE (Last Updated: 4 days ago)9 WeeksTinThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2004e3yesActive1 (Unlimited)3EAR99265MOhmFAST SWITCHINGFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified138.5W TcSingleENHANCEMENT MODE38.5WISOLATED55 nsN-ChannelSWITCHING265m Ω @ 9A, 10V5V @ 250μA2860pF @ 25V18A Tc60nC @ 10V165ns10V±30V90 ns95 ns18A5VTO-220AB30V500V72A945 mJ9.19mm10.16mm4.7mmNo SVHCROHS3 CompliantLead Free-----
-
----Through HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™---Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-----38.5W Tc-----N-Channel-1.15Ohm @ 3A, 10V5V @ 250μA960pF @ 25V6A Tc20nC @ 10V-10V±30V-------------ROHS3 Compliant-TO-220F500V--
-
---Through HoleThrough HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™2013--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-----35W Tc-----N-Channel-290m Ω @ 7A, 10V5V @ 250μA1060pF @ 25V14A Tc25nC @ 10V-10V±30V--14A----------RoHS Compliant--300V--
-
ACTIVE (Last Updated: 4 days ago)9 Weeks-Through HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2013e3yesActive1 (Unlimited)3EAR99--FET General Purpose PowerMOSFET (Metal Oxide)----141W TcSingleENHANCEMENT MODE41WISOLATED16 nsN-ChannelSWITCHING140m Ω @ 9A, 10V5V @ 250μA1180pF @ 25V18A Tc26nC @ 10V50ns10V±30V40 ns50 ns18A-TO-220AB30V200V72A-16.07mm10.36mm4.9mm-ROHS3 Compliant---Tin (Sn)No
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