FDPF18N50

Fairchild/ON Semiconductor FDPF18N50

Part Number:
FDPF18N50
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849017-FDPF18N50
Description:
MOSFET N-CH 500V 18A TO-220F
ECAD Model:
Datasheet:
FDPF18N50

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Specifications
Fairchild/ON Semiconductor FDPF18N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF18N50.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    9 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    UniFET™
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    265MOhm
  • Additional Feature
    FAST SWITCHING
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    38.5W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    38.5W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    55 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    265m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2860pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    165ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    95 ns
  • Continuous Drain Current (ID)
    18A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    72A
  • Avalanche Energy Rating (Eas)
    945 mJ
  • Height
    9.19mm
  • Length
    10.16mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDPF18N50 Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts

FDPF18N50 Features RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested

FDPF18N50 Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply
FDPF18N50 More Descriptions
N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F
Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 500V 18A TO-220F
500V 18A 58W 265m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N-CH, 500V, 18A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Source Voltage Vds:500V; On Resistance
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDPF18N50.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Terminal Finish
    Radiation Hardening
    View Compare
  • FDPF18N50
    FDPF18N50
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    265MOhm
    FAST SWITCHING
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    1
    38.5W Tc
    Single
    ENHANCEMENT MODE
    38.5W
    ISOLATED
    55 ns
    N-Channel
    SWITCHING
    265m Ω @ 9A, 10V
    5V @ 250μA
    2860pF @ 25V
    18A Tc
    60nC @ 10V
    165ns
    10V
    ±30V
    90 ns
    95 ns
    18A
    5V
    TO-220AB
    30V
    500V
    72A
    945 mJ
    9.19mm
    10.16mm
    4.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDPF7N50F
    -
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    38.5W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    1.15Ohm @ 3A, 10V
    5V @ 250μA
    960pF @ 25V
    6A Tc
    20nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-220F
    500V
    -
    -
  • FDPF14N30T
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    35W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    290m Ω @ 7A, 10V
    5V @ 250μA
    1060pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    300V
    -
    -
  • FDPF18N20FT
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    41W Tc
    Single
    ENHANCEMENT MODE
    41W
    ISOLATED
    16 ns
    N-Channel
    SWITCHING
    140m Ω @ 9A, 10V
    5V @ 250μA
    1180pF @ 25V
    18A Tc
    26nC @ 10V
    50ns
    10V
    ±30V
    40 ns
    50 ns
    18A
    -
    TO-220AB
    30V
    200V
    72A
    -
    16.07mm
    10.36mm
    4.9mm
    -
    ROHS3 Compliant
    -
    -
    -
    Tin (Sn)
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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