Fairchild/ON Semiconductor FDP8030L

Name: FDP8030L
Brand: Fairchild/ON Semiconductor
SKU: 2479070-FDP8030L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP8030L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479070-FDP8030L

Description:: MOSFET N-CH 30V 80A TO220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP8030L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP8030L.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
80A
Number of Elements
1
Power Dissipation-Max
187W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
187W
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10500pF @ 15V
Current - Continuous Drain (Id) @ 25°C
80A Ta
Gate Charge (Qg) (Max) @ Vgs
170nC @ 5V
Rise Time
185ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
200 ns
Turn-Off Delay Time
160 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
1.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP8030L Descriptions
The FDP8030L was created to increase the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Other MOSFETS with equivalent RDS(on) parameters have faster switching and lower gate charge than the FDP8030L. As a result, driving a MOSFET is easier and safer (even at very high frequencies), and DC/DC power supply systems are more efficient overall. The operating temperature of FDP8030L is -65°C~175°C TJ and its maximum power dissipation are 187W. FDP8030L has 3 pins and it is available in TO-220-3 packaging way.

FDP8030L Features
80 A, 30 V
Critical DC electrical parameters specified at elevated temperature
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
High-performance trench technology for extremely low RDS(ON)
175°C maximum junction temperature rating

FDP8030L Applications
General-purpose amplifier
Switching applications
Power management
Industrial

FDP8030L More Descriptions

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A, 35mΩ
Trans MOSFET N-CH 30V 80A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CHANNEL MOSFET, 30V, 80A, TO-220; Tran; N CHANNEL MOSFET, 30V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; No. of Pins:3
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Product Comparison

The three parts on the right have similar specifications to FDP8030L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Resistance

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Pulsed Drain Current-Max (IDM)

Input Capacitance

FET Technology

Drain to Source Resistance

Rds On Max

Height

Length

Width

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDP8030L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-65°C~175°C TJ

Tube

PowerTrench®

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

80A

1

187W Tc

Single

ENHANCEMENT MODE

187W

20 ns

N-Channel

SWITCHING

3.5m Ω @ 80A, 10V

2V @ 250μA

10500pF @ 15V

80A Ta

170nC @ 5V

185ns

4.5V 10V

±20V

200 ns

160 ns

80A

1.5V

TO-220AB

20V

30V

1.5 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP8440

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

Through Hole

-

TO-220AB

3

1.8g

-

-

Tube

-

-

yes

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

-

-

1

-

Single

ENHANCEMENT MODE

306W

43 ns

-

SWITCHING

-

-

-

-

-

130ns

-

-

290 ns

435 ns

277A

-

-

20V

40V

-

-

No

ROHS3 Compliant

Lead Free

2017

2.2MOhm

175°C

-55°C

306W

40V

N-CHANNEL

500A

24.74nF

METAL-OXIDE SEMICONDUCTOR

2.2mOhm

2.2 mΩ

16.51mm

10.67mm

4.83mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP8030L vs FDP8440
FDP8878

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3

-

1.8g

-

-55°C~175°C TJ

Tube

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

40.5W Tc

Single

-

40.5W

-

N-Channel

-

15m Ω @ 40A, 10V

2.5V @ 250μA

1235pF @ 15V

40A Tc

23nC @ 10V

244ns

4.5V 10V

±20V

35.3 ns

14.8 ns

40A

-

-

20V

30V

-

-

-

RoHS Compliant

Lead Free

2001

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP8030L vs FDP8878
FDP8443_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

Automotive, AEC-Q101, PowerTrench®

3.5 mOhm @ 80A, 10V

188W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

9310pF @ 25V

185nC @ 10V

N-Channel

-

10V

40V

20A (Ta), 80A (Tc)

FDP8030L vs FDP8443_F085