Fairchild/ON Semiconductor FDP42AN15A0
- Part Number:
- FDP42AN15A0
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482082-FDP42AN15A0
- Description:
- MOSFET N-CH 150V 35A TO-220AB
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FDP42AN15A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP42AN15A0.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time9 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating35A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs42m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2150pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Ta 35A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time19ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)23 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Drain-source On Resistance-Max0.042Ohm
- Drain to Source Breakdown Voltage150V
- Avalanche Energy Rating (Eas)90 mJ
- Height9.4mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDP42AN15A0 Description
FDP42AN15A0 MOSFET has much superior body diode reverse recovery performance. FDP42AN15A0 ON Semiconductor can remove the additional components and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. FDP42AN15A0 datasheet is suitable for Power Train Management, Consumer Appliances, Integrated Starter, Automotive Engine Control, as well as Solenoid and Motor Drivers.
FDP42AN15A0 Features
RDS(on) = 36m? (Typ.) @ VGS = 10V, ID = 12A
UIS Capability
QG(tot) = 33nC (Typ.) @ VGS = 10V
Low Qrr Body Diode
Low Miller Charge
FDP42AN15A0 Applications
Power Train Management
Consumer Appliances
Integrated Starter/Alternator
Automotive Engine Control
Solenoid and Motor Drivers
FDP42AN15A0 More Descriptions
Trans MOSFET N-CH 150V 5A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
TO-220AB, SINGLE, N-CH, 150V, 42MOHM ULTRAFET TRENCH MOSFET
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ
150V 35A 42m´Î@10V12A 150W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, SMD, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
TO-220AB, SINGLE, N-CH, 150V, 42MOHM ULTRAFET TRENCH MOSFET
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ
150V 35A 42m´Î@10V12A 150W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, SMD, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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