Fairchild/ON Semiconductor FDP2710

Name: FDP2710
Brand: Fairchild/ON Semiconductor
SKU: 2479546-FDP2710
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP2710

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479546-FDP2710

Description:: MOSFET N-CH 250V 50A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP2710 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP2710.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
42.5MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
260W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
260W
Turn On Delay Time
80 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
42.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7280pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
101nC @ 10V
Rise Time
252ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
154 ns
Turn-Off Delay Time
112 ns
Continuous Drain Current (ID)
50A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Height
16.51mm
Length
10.67mm
Width
4.83mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP2710 Description The N-channel MOSFET FDP2710 is produced by Fairchild's advanced power channel process, which is tailored to minimize on-resistance while maintaining higher switching performance.
FDP2710 Features
·RDS(on)=36.3mΩ(Typ)@VGs=10VID=25A·Fast Switching Speed·Low Gate Charge ·High Performance Trench technologyfor ExtremelyLow Rps(on) .High Power and Current Handing Capability RoHS Compliant FDP2710 Applications Consumer Appliances ·Synchranous Rectification

FDP2710 More Descriptions

Transistor, N-channel, PowerTrench MOSFET, 250V, 50A, 42.5mOhm, TO-220 | ON Semiconductor FDP2710
N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ
Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 50A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Product Comparison

The three parts on the right have similar specifications to FDP2710.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Reach Compliance Code

Pin Count

JESD-30 Code

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

REACH SVHC

View Compare
FDP2710

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

PowerTrench®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

42.5MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

260W Tc

Single

ENHANCEMENT MODE

260W

80 ns

N-Channel

SWITCHING

42.5m Ω @ 25A, 10V

5V @ 250μA

7280pF @ 25V

50A Tc

101nC @ 10V

252ns

10V

±30V

154 ns

112 ns

50A

TO-220AB

30V

250V

16.51mm

10.67mm

4.83mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP24AN06LA0

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

PowerTrench®

2004

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

75W Tc

-

-

-

-

N-Channel

-

19mOhm @ 40A, 10V

3V @ 250μA

1850pF @ 25V

7.8A Ta 40A Tc

21nC @ 5V

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

60V

-

-

-

-

-

-

-

-

-

-

-

-

FDP2710 vs FDP24AN06LA0
FDP2670

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-65°C~175°C TJ

Tube

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

MOSFET (Metal Oxide)

NOT APPLICABLE

NOT APPLICABLE

COMMERCIAL

1

93W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

130m Ω @ 10A, 10V

4.5V @ 250μA

1.32pF @ 100V

19A Ta

38nC @ 10V

-

10V

±20V

-

-

-

TO-220AB

-

-

-

-

-

ROHS3 Compliant

-

-

200V

NO

SINGLE

unknown

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

19A

0.13Ohm

40A

200V

375 mJ

-

FDP2710 vs FDP2670
FDP20N50F

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

6 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

250W Tc

Single

ENHANCEMENT MODE

250W

45 ns

N-Channel

SWITCHING

260m Ω @ 10A, 10V

5V @ 250μA

3390pF @ 25V

20A Tc

65nC @ 10V

120ns

10V

±30V

60 ns

100 ns

20A

TO-220AB

30V

500V

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

0.26Ohm

80A

-

-

No SVHC

FDP2710 vs FDP20N50F

Certification

Related parts for FDP2710

FDP20AN06A0

Fairchild/ON Semiconductor

MOSFET N-CH 60V 45A TO-220AB
FDP2552

Fairchild/ON Semiconductor

MOSFET N-CH 150V 37A TO-220AB
FDP2614

Fairchild/ON Semiconductor

MOSFET N-CH 200V 62A TO-220
FDP24AN06LA0

Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A TO-220AB
FDP2670

Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A TO-220AB
FDP2570

Fairchild/ON Semiconductor

MOSFET N-CH 150V 22A TO-220AB
FDP26N40

Fairchild/ON Semiconductor

MOSFET N-CH 400V 26A TO-220
FDP24N40

Fairchild/ON Semiconductor

MOSFET N-CH 400V 24A TO-220
FDP2710_F085

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FDP20N50F

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Part Number	Manufacturers	Description	Stock	Price
FDP2710_F085 DISTI #31043997	ON Semiconductor	250V N-CHANNEL POWERTRENCH MOS	800	800 $1.9317
FDP2710 DISTI #FDP2710-ND	ON Semiconductor	MOSFET N-CH 250V 50A TO-220 RoHS: Compliant	731	1 $3.76 10 $3.374 25 $3.1892 100 $2.7641 800 $2.35305 3200 $1.88528
FDP2710-F085 DISTI #FDP2710-F085-ND	ON Semiconductor	MOSFET N-CH 250V 4A TO-220 RoHS: Compliant	0	800 $2.52351
FDP2710 DISTI #V36:1790_06359620	ON Semiconductor	250V, 50A, NCH POWER TRENCH MO	0	800 $1.69 8000 $1.68 80000 $1.619 400000 $1.574 800000 $1.573
FDP2710_F085 DISTI #V36:1790_06359181	ON Semiconductor	250V N-CHANNEL POWERTRENCH MOS	0	800 $1.99 8000 $1.963 80000 $1.796 400000 $1.688 800000 $1.687
FDP2710 DISTI #FDP2710	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	400	800 $1.69 1600 $1.69 2400 $1.69 4000 $1.69 8000 $1.59
FDP2710 DISTI #FDP2710	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	0	1 $2.09 10 $1.89 25 $1.89 50 $1.79 100 $1.69 500 $1.69 1000 $1.49
FDP2710 DISTI #FDP2710	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	0	177 $1.79 354 $1.79 531 $1.79 885 $1.69 1770 $1.69
FDP2710 DISTI #FDP2710	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB R RoHS: Compliant	0	800 $2.7 1600 $2.5962 2400 $2.5 4000 $2.4107 8000 $2.3276 20000 $2.25 40000 $2.2131
FDP2710_F085 DISTI #FDP2710_F085	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB T	0	167 $1.89 334 $1.89 501 $1.89 835 $1.79 1670 $1.79
FDP2710_F085 DISTI #FDP2710-F085	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	0	800 $1.79 1600 $1.79 3200 $1.79 4800 $1.79 8000 $1.69
FDP2710_F085 DISTI #FDP2710-F085	ON Semiconductor	Trans MOSFET N-CH 250V 50A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	0	800 $2.8956 1600 $2.78423 2400 $2.68111 4000 $2.58536 8000 $2.49621 20000 $2.413 40000 $2.37344
FDP2710_SN00168 DISTI #FDP2710_SN00168	ON Semiconductor	- Bulk (Alt: FDP2710_SN00168)	0	167 $1.89 334 $1.89 501 $1.89 835 $1.79 1670 $1.79
FDP2710_SW82258 DISTI #FDP2710_SW82258	ON Semiconductor	- Bulk (Alt: FDP2710_SW82258)	0	167 $1.89 334 $1.89 501 $1.89 835 $1.79 1670 $1.79
FDP2710 DISTI #08N9302	ON Semiconductor	FET 250V 42.5 MOHM TO220 / TUBE	0	1 $3.92 10 $3.18 100 $2.64 500 $2.39 1000 $2.03 2500 $1.94 10000 $1.83
FDP2710-F085 DISTI #48AC1024	ON Semiconductor	NMOS TO220 250V 47 MOHM / TUBE	0	1 $3.96 100 $3.27 250 $3.01 500 $2.8 1000 $2.64
FDP2710 DISTI #512-FDP2710	ON Semiconductor	MOSFET 250V N-Channel PowerTrench RoHS: Compliant	1510	1 $3.58 10 $3.04 100 $2.64 250 $2.5 500 $2.25
FDP2710-F085 DISTI #512-FDP2710_F085	ON Semiconductor	MOSFET 250V NCHAN PwrTrench RoHS: Compliant	1238	1 $3.83 10 $3.25 100 $2.82 250 $2.67 500 $2.4
FDP2710 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 50A I(D), 250V, 0.0 RoHS: Compliant	1556	1 $2.43 25 $2.26 100 $2.16 500 $2.08 1000 $1.97
FDP2710_F085 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4A I(D), 250V, 0.04 RoHS: Compliant	100	1 $2.43 25 $2.26 100 $2.16 500 $2.08 1000 $1.97
FDP2710_SN00168 DISTI #	Fairchild Semiconductor Corporation	RoHS: Not Compliant	665	1 $2.43 25 $2.26 100 $2.16 500 $2.08 1000 $1.97
FDP2710_SW82258 DISTI #	Fairchild Semiconductor Corporation	Transistor RoHS: Not Compliant	3100	1 $2.43 25 $2.26 100 $2.16 500 $2.08 1000 $1.97
FDP2710 DISTI #	Fairchild Semiconductor Corporation		370
FDP2710 DISTI #8648546P	ON Semiconductor	MOSFET N-CH 250V 50A POWERTRENCH TO220, TU	344	10 $2.29 40 $2.005 100 $1.88 200 $1.785
FDP2710F085 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4A I(D), 250V, 0.04 RoHS: Not Compliant	6000
FDP2710 DISTI #	ON Semiconductor	N-Ch PowerTrench MOSFET 250V,50A,42.5m	3200	1 $3.05 100 $2.29 500 $1.96 1000 $1.83
FDP2710-F085 DISTI #	ON Semiconductor	N-Ch PowerTrench MOSFET 250V,50A,47m	500	1 $5.27 100 $3.37 500 $2.78 1000 $2.55

Fairchild/ON Semiconductor FDP2710

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