Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDP036N10A
FDP036N10A

Fairchild/ON Semiconductor FDP036N10A

Part Number:
FDP036N10A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479475-FDP036N10A
Description:
MOSFET N-CH 100V TO-220AB-3
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDP036N10A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP036N10A.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    9 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3.6MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    333W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    227W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.6m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7295pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    116nC @ 10V
  • Rise Time
    54ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    214A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    704A
  • Avalanche Energy Rating (Eas)
    658 mJ
  • Nominal Vgs
    3 V
  • Height
    9.4mm
  • Length
    10.67mm
  • Width
    4.83mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDP036N10A Description
The innovative PowerTrench? technology is used to make the FDP036N10A N-Channel MOSFET, which is designed to reduce on-resistance while preserving great switching performance.

FDP036N10A Features
RoHS Compliant
Fast switching speed
Low gate charge, QG = 89nC (typ)
RDS(on) = 3.2mΩ (typ) @ VGS = 10V, ID = 75A
High power and high current handling capability
High-performance trench technology for very low RDS(on)

FDP036N10A Applications
UPS
Motor Drives
Electric bicycle
Micro Solar Inverters
Battery Protection Circuit
Uninterruptible Power Supplies
AC-DC Commercial Power - Servers and Workstations
AC-DC Commercial Power Supplies - Desktop Computers
Synchronous Rectification for ATX / Server / Telecom PSU
FDP036N10A More Descriptions
MOSFET N-CH 100V TO-220AB-3 / Trans MOSFET N-CH Si 100V 214A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, POWERTRENCH, 100V, 214A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDP036N10A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Threshold Voltage
    Radiation Hardening
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Reach Compliance Code
    Configuration
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDP036N10A
    FDP036N10A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    3.6MOhm
    Tin (Sn)
    ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    333W Tc
    Single
    ENHANCEMENT MODE
    227W
    DRAIN
    22 ns
    N-Channel
    SWITCHING
    3.6m Ω @ 75A, 10V
    4V @ 250μA
    7295pF @ 25V
    120A Tc
    116nC @ 10V
    54ns
    10V
    ±20V
    11 ns
    37 ns
    214A
    TO-220AB
    20V
    100V
    704A
    658 mJ
    3 V
    9.4mm
    10.67mm
    4.83mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP047N10
    FDP047N10
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.421g
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    4.7MOhm
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    -
    174 ns
    N-Channel
    SWITCHING
    4.7m Ω @ 75A, 10V
    4.5V @ 250μA
    15265pF @ 25V
    120A Tc
    210nC @ 10V
    386ns
    10V
    ±20V
    244 ns
    344 ns
    164A
    TO-220AB
    20V
    100V
    656A
    -
    -
    15.38mm
    10.1mm
    4.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    3.5V
    No
    -
    -
    -
    -
    -
    -
    FDP036N10A vs FDP047N10
  • FDP040N06
    FDP040N06
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    PowerTrench®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    231W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    4mOhm @ 75A, 10V
    4.5V @ 250μA
    8.235pF @ 25V
    120A Tc
    133nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    TO-220-3
    60V
    -
    -
    -
    -
    FDP036N10A vs FDP040N06
  • FDP027N08B
    FDP027N08B
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    PowerTrench®
    -
    -
    yes
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    246W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    2.7m Ω @ 100A, 10V
    4.5V @ 250μA
    13530pF @ 40V
    120A Tc
    178nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    80V
    NO
    unknown
    Single
    120A
    FDP036N10A vs FDP027N08B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDP036N10A
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.