Fairchild/ON Semiconductor FDP032N08

Name: FDP032N08
Brand: Fairchild/ON Semiconductor
SKU: 2479473-FDP032N08
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP032N08

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479473-FDP032N08

Description:: MOSFET N-CH 75V 120A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP032N08 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP032N08.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
2.421g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.2MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
375W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
375W
Turn On Delay Time
230 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
15160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
220nC @ 10V
Rise Time
191ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
121 ns
Turn-Off Delay Time
335 ns
Continuous Drain Current (ID)
235A
Threshold Voltage
3.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
940A
Height
15.38mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP032N08 Description
FDP032N08 is made with Fairchild Semiconductor's innovative PowerTrench? technology, which is designed to reduce on-state resistance while preserving superior switching performance.

FDP032N08 Features
?RDS(on)= 2.5 mQ (Typ.) @ 1° V, Id = 75 A @ gs = 1° V
?Extremely Fast Switching Speed
?Affordable Gate Charge
?Extremely Low RDS with High Performance Trench Technology (on)
?Capacity to handle high power and cur rent

FDP032N08 Applications
?Automatic Rectification for ATX/Server/Telecom PSUs
?Protection Circuit for Batteries
?Uninterruptible Power Supplies and Motor Drives

FDP032N08 More Descriptions

N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ
Trans MOSFET N-CH 75V 235A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:75V; On Resistance
Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C

Product Comparison

The three parts on the right have similar specifications to FDP032N08.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

Case Connection

Radiation Hardening

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Surface Mount

Reach Compliance Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

View Compare
FDP032N08

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3

3

2.421g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

3.2MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

375W Tc

Single

ENHANCEMENT MODE

375W

230 ns

N-Channel

SWITCHING

3.2m Ω @ 75A, 10V

4.5V @ 250μA

15160pF @ 25V

120A Tc

220nC @ 10V

191ns

10V

±20V

121 ns

335 ns

235A

3.5V

TO-220AB

20V

75V

940A

15.38mm

10.1mm

4.7mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP060AN08A0

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

6MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

1

255W Tc

Single

ENHANCEMENT MODE

255W

19 ns

N-Channel

SWITCHING

6m Ω @ 80A, 10V

4V @ 250μA

5150pF @ 25V

16A Ta 80A Tc

95nC @ 10V

79ns

6V 10V

±20V

38 ns

37 ns

80A

4V

TO-220AB

20V

75V

-

9.4mm

10.67mm

4.83mm

No SVHC

ROHS3 Compliant

Lead Free

75V

80A

DRAIN

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP032N08 vs FDP060AN08A0
FDP027N08B_F102

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4.5V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

PowerTrench®

2.7 mOhm @ 100A, 10V

246W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

13530pF @ 40V

178nC @ 10V

N-Channel

-

10V

80V

120A (Tc)

-

-

-

-

-

FDP032N08 vs FDP027N08B_F102
FDP027N08B

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

PowerTrench®

-

-

yes

Obsolete

1 (Unlimited)

-

-

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

-

246W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

2.7m Ω @ 100A, 10V

4.5V @ 250μA

13530pF @ 40V

120A Tc

178nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

unknown

Single

80V

120A

FDP032N08 vs FDP027N08B