FDMA908PZ

Fairchild/ON Semiconductor FDMA908PZ

Part Number:
FDMA908PZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2484847-FDMA908PZ
Description:
MOSFET P-CH 12V 12A 6QFN
ECAD Model:
Datasheet:
FDMA908PZ

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Specifications
Fairchild/ON Semiconductor FDMA908PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA908PZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-WDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.5m Ω @ 12A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3957pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    12A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    34nC @ 4.5V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    71 ns
  • Turn-Off Delay Time
    131 ns
  • Continuous Drain Current (ID)
    -12A
  • Threshold Voltage
    -600mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -12V
  • Max Junction Temperature (Tj)
    150°C
  • Feedback Cap-Max (Crss)
    903 pF
  • Height
    850μm
  • Length
    2.05mm
  • Width
    2.05mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMA908PZ Description
The FDMA908PZ is a single P-Channel power MOSFET developed for battery charging and load switching in mobile phones and other ultraportable devices. It has a low-on-state resistance MOSFET and ESD protection through a zener diode. According to the FDMA908PZ datasheet, the MicroFET 2X2 package has remarkable thermal performance for its physical size and is well suited to linear mode applications.

FDMA908PZ Features
RoHS Compliant
Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
HBM ESD protection level > 2.8 kV typical (Note 3)
Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
Free from halogenated compounds and antimony oxides
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm

FDMA908PZ Applications
Battery charge
Load switching in cellular handset
Other ultraportable applications
FDMA908PZ More Descriptions
P-Channel PowerTrench® MOSFET -12V, -12A, 12.5mΩ
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-12V; On Resistance
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.4W; Transistor Case Style: MicroFET; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to FDMA908PZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Resistance
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    Radiation Hardening
    Nominal Vgs
    Terminal Finish
    View Compare
  • FDMA908PZ
    FDMA908PZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    1
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    2.4W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    12.5m Ω @ 12A, 4.5V
    1V @ 250μA
    3957pF @ 6V
    12A Ta
    34nC @ 4.5V
    12ns
    12V
    1.8V 4.5V
    ±8V
    71 ns
    131 ns
    -12A
    -600mV
    8V
    -12V
    150°C
    903 pF
    850μm
    2.05mm
    2.05mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMA420NZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    1
    -
    2.4W Ta
    Single
    ENHANCEMENT MODE
    900mW
    DRAIN
    9.8 ns
    N-Channel
    -
    30m Ω @ 5.7A, 4.5V
    1.5V @ 250μA
    935pF @ 10V
    5.7A Ta
    12nC @ 4.5V
    8.6ns
    -
    2.5V 4.5V
    ±12V
    8.6 ns
    21.5 ns
    5.7A
    830mV
    12V
    20V
    -
    -
    750μm
    2mm
    2mm
    ROHS3 Compliant
    Lead Free
    30MOhm
    24A
    24A
    No SVHC
    No
    -
    -
  • FDMA510PZ
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    1
    -
    2.4W Ta
    Single
    ENHANCEMENT MODE
    2.4W
    DRAIN
    7 ns
    P-Channel
    SWITCHING
    30m Ω @ 7.8A, 4.5V
    1.5V @ 250μA
    1480pF @ 10V
    7.8A Ta
    27nC @ 4.5V
    9ns
    20V
    1.5V 4.5V
    ±8V
    64 ns
    125 ns
    -7.8A
    -700mV
    8V
    -20V
    -
    -
    750μm
    2mm
    2mm
    ROHS3 Compliant
    Lead Free
    30MOhm
    -
    24A
    No SVHC
    No
    -700 mV
    -
  • FDMA7632
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    -
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    1
    1
    2.4W Ta
    Single
    ENHANCEMENT MODE
    900mW
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    19m Ω @ 9A, 10V
    3V @ 250μA
    760pF @ 15V
    9A Ta
    13nC @ 10V
    2ns
    -
    4.5V 10V
    ±20V
    2 ns
    14 ns
    9A
    1V
    20V
    30V
    150°C
    40 pF
    850μm
    2mm
    2mm
    ROHS3 Compliant
    -
    -
    9A
    -
    No SVHC
    No
    2.1 V
    Nickel/Palladium/Gold (Ni/Pd/Au)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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