Fairchild/ON Semiconductor FDMA908PZ
- Part Number:
- FDMA908PZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484847-FDMA908PZ
- Description:
- MOSFET P-CH 12V 12A 6QFN
- Datasheet:
- FDMA908PZ
Fairchild/ON Semiconductor FDMA908PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA908PZ.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-WDFN Exposed Pad
- Number of Pins6
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.4W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12.5m Ω @ 12A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3957pF @ 6V
- Current - Continuous Drain (Id) @ 25°C12A Ta
- Gate Charge (Qg) (Max) @ Vgs34nC @ 4.5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)71 ns
- Turn-Off Delay Time131 ns
- Continuous Drain Current (ID)-12A
- Threshold Voltage-600mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-12V
- Max Junction Temperature (Tj)150°C
- Feedback Cap-Max (Crss)903 pF
- Height850μm
- Length2.05mm
- Width2.05mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMA908PZ Description
The FDMA908PZ is a single P-Channel power MOSFET developed for battery charging and load switching in mobile phones and other ultraportable devices. It has a low-on-state resistance MOSFET and ESD protection through a zener diode. According to the FDMA908PZ datasheet, the MicroFET 2X2 package has remarkable thermal performance for its physical size and is well suited to linear mode applications.
FDMA908PZ Features
RoHS Compliant
Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
HBM ESD protection level > 2.8 kV typical (Note 3)
Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
Free from halogenated compounds and antimony oxides
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
FDMA908PZ Applications
Battery charge
Load switching in cellular handset
Other ultraportable applications
The FDMA908PZ is a single P-Channel power MOSFET developed for battery charging and load switching in mobile phones and other ultraportable devices. It has a low-on-state resistance MOSFET and ESD protection through a zener diode. According to the FDMA908PZ datasheet, the MicroFET 2X2 package has remarkable thermal performance for its physical size and is well suited to linear mode applications.
FDMA908PZ Features
RoHS Compliant
Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
HBM ESD protection level > 2.8 kV typical (Note 3)
Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
Free from halogenated compounds and antimony oxides
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
FDMA908PZ Applications
Battery charge
Load switching in cellular handset
Other ultraportable applications
FDMA908PZ More Descriptions
P-Channel PowerTrench® MOSFET -12V, -12A, 12.5mΩ
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-12V; On Resistance
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.4W; Transistor Case Style: MicroFET; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-12V; On Resistance
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.4W; Transistor Case Style: MicroFET; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to FDMA908PZ.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Feedback Cap-Max (Crss)HeightLengthWidthRoHS StatusLead FreeResistanceDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningNominal VgsTerminal FinishView Compare
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FDMA908PZACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-WDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e4yesActive1 (Unlimited)6EAR99Other TransistorsMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED112.4W TaSingleENHANCEMENT MODE2.4WDRAIN11 nsP-ChannelSWITCHING12.5m Ω @ 12A, 4.5V1V @ 250μA3957pF @ 6V12A Ta34nC @ 4.5V12ns12V1.8V 4.5V±8V71 ns131 ns-12A-600mV8V-12V150°C903 pF850μm2.05mm2.05mmROHS3 CompliantLead Free--------
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ACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-WDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e4yesActive1 (Unlimited)6EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUAL---1-2.4W TaSingleENHANCEMENT MODE900mWDRAIN9.8 nsN-Channel-30m Ω @ 5.7A, 4.5V1.5V @ 250μA935pF @ 10V5.7A Ta12nC @ 4.5V8.6ns-2.5V 4.5V±12V8.6 ns21.5 ns5.7A830mV12V20V--750μm2mm2mmROHS3 CompliantLead Free30MOhm24A24ANo SVHCNo--
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ACTIVE (Last Updated: 4 days ago)16 WeeksGoldSurface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e4yesActive1 (Unlimited)6EAR99Other TransistorsMOSFET (Metal Oxide)DUAL---1-2.4W TaSingleENHANCEMENT MODE2.4WDRAIN7 nsP-ChannelSWITCHING30m Ω @ 7.8A, 4.5V1.5V @ 250μA1480pF @ 10V7.8A Ta27nC @ 4.5V9ns20V1.5V 4.5V±8V64 ns125 ns-7.8A-700mV8V-20V--750μm2mm2mmROHS3 CompliantLead Free30MOhm-24ANo SVHCNo-700 mV-
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ACTIVE (Last Updated: 4 days ago)16 Weeks-Surface MountSurface Mount6-VDFN Exposed Pad630mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)6EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUAL---112.4W TaSingleENHANCEMENT MODE900mWDRAIN6 nsN-ChannelSWITCHING19m Ω @ 9A, 10V3V @ 250μA760pF @ 15V9A Ta13nC @ 10V2ns-4.5V 10V±20V2 ns14 ns9A1V20V30V150°C40 pF850μm2mm2mmROHS3 Compliant--9A-No SVHCNo2.1 VNickel/Palladium/Gold (Ni/Pd/Au)
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