Fairchild/ON Semiconductor FDC2512
- Part Number:
- FDC2512
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478119-FDC2512
- Description:
- MOSFET N-CH 150V 1.4A SSOT-6
- Datasheet:
- FDC2512
Fairchild/ON Semiconductor FDC2512 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC2512.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance425MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.4A
- Number of Elements1
- Number of Channels1
- Voltage150V
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Current14A
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time6.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs425m Ω @ 1.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds344pF @ 75V
- Current - Continuous Drain (Id) @ 25°C1.4A Ta
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time3.5ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)1.4A
- Threshold Voltage2.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Dual Supply Voltage150V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2.6 V
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC2512 Overview
The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.4A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.6V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDC2512 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2.6V
FDC2512 Applications
There are a lot of ON Semiconductor
FDC2512 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.4A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.6V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDC2512 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2.6V
FDC2512 Applications
There are a lot of ON Semiconductor
FDC2512 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
FDC2512 More Descriptions
Transistor MOSFET N Channel 150 Volt 1.4 Amp 6-Pin Supersot Tape And Reel
N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ
ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):425mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.4A; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ
ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):425mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.4A; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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