FDC2512

Fairchild/ON Semiconductor FDC2512

Part Number:
FDC2512
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478119-FDC2512
Description:
MOSFET N-CH 150V 1.4A SSOT-6
ECAD Model:
Datasheet:
FDC2512

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Specifications
Fairchild/ON Semiconductor FDC2512 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC2512.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    425MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    1.4A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    150V
  • Power Dissipation-Max
    1.6W Ta
  • Element Configuration
    Single
  • Current
    14A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    6.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    425m Ω @ 1.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    344pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    1.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • Rise Time
    3.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    1.4A
  • Threshold Voltage
    2.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Dual Supply Voltage
    150V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    2.6 V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC2512 Overview
The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.4A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.6V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.

FDC2512 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2.6V


FDC2512 Applications
There are a lot of ON Semiconductor
FDC2512 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
FDC2512 More Descriptions
Transistor MOSFET N Channel 150 Volt 1.4 Amp 6-Pin Supersot Tape And Reel
N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ
ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):425mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.4A; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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