Fairchild/ON Semiconductor FDB3632

Name: FDB3632
Brand: Fairchild/ON Semiconductor
SKU: 2848499-FDB3632
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB3632

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848499-FDB3632

Description:: MOSFET N-CH 100V 80A D2PAK

ECAD Model:

Datasheet:: FDB3632

Specifications

Fairchild/ON Semiconductor FDB3632 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB3632.

Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
9MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
44A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
39ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
96 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
5.08mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDB3632 Description
FDB3632 100V, 80A, 9m N-Channel PowerTrench? MOSFET The latest shielded gate PowerTrench? MOSFET may significantly increase the efficiency of synchronous rectification by combining a reduced QSYNC and soft reverse-recovery intrinsic body diode performance with quick switching.

FDB3632 Features
RoHS Compliant
Low Miller Charge
Low QRR Body Diode
QG(tot) = 84nC (Typ.) @ VGS = 10V
RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A
UIS Capability (Single Pulse and Repetitive Pulse)

FDB3632 Applications
Workstation
Server & Mainframe
Other Data Processing
AC-DC Merchant Power Supply - Servers & Workstations

FDB3632 More Descriptions

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Trans MOSFET N-CH 100V 12A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310

Product Comparison

The three parts on the right have similar specifications to FDB3632.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Terminal Finish

Additional Feature

Avalanche Energy Rating (Eas)

View Compare
FDB3632

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 20 hours ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2013

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

9MOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

44A

R-PSSO-G2

1

1

310W Tc

Single

ENHANCEMENT MODE

310W

DRAIN

30 ns

N-Channel

SWITCHING

9m Ω @ 80A, 10V

4V @ 250μA

6000pF @ 25V

12A Ta 80A Tc

110nC @ 10V

39ns

6V 10V

±20V

46 ns

96 ns

80A

4V

20V

100V

100V

175°C

4 V

5.08mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDB3860

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

3.1W Ta 71W Tc

-

-

-

-

-

N-Channel

-

37m Ω @ 5.9A, 10V

4.5V @ 250μA

1740pF @ 50V

6.4A Ta 30A Tc

30nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NOT SPECIFIED

compliant

NOT SPECIFIED

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB3632 vs FDB3860
FDB3632_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D²PAK (TO-263AB)

Automotive, AEC-Q101, PowerTrench®

9 mOhm @ 80A, 10V

310W (Tc)

Original-Reel®

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 175°C (TJ)

Surface Mount

6000pF @ 25V

110nC @ 10V

N-Channel

-

10V

100V

12A (Ta)

-

-

-

FDB3632 vs FDB3632_F085
FDB390N15A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 21 hours ago)

8 Weeks

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2013

e3

yes

Active

1 (Unlimited)

2

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

-

75W Tc

Single

ENHANCEMENT MODE

75W

DRAIN

14 ns

N-Channel

SWITCHING

39m Ω @ 27A, 10V

4V @ 250μA

1285pF @ 75V

27A Tc

18.6nC @ 10V

10ns

10V

±20V

5 ns

20 ns

27A

-

20V

150V

-

-

-

4.83mm

10.67mm

9.65mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tin (Sn)

ULTRA-LOW RESISTANCE

78 mJ

FDB3632 vs FDB390N15A