Fairchild/ON Semiconductor FDB33N25TM

Name: FDB33N25TM
Brand: Fairchild/ON Semiconductor
SKU: 2478309-FDB33N25TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB33N25TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478309-FDB33N25TM

Description:: MOSFET N-CH 250V 33A D2PAK

ECAD Model:

Datasheet:: FDB33N25TM

Specifications

Fairchild/ON Semiconductor FDB33N25TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB33N25TM.

Lifecycle Status
ACTIVE (Last Updated: 19 hours ago)
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
UniFET™
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
94MOhm
Additional Feature
FAST SWITCHING, AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
235W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
235W
Case Connection
DRAIN
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Rise Time
230ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
120 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
33A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Nominal Vgs
3 V
Height
4.83mm
Length
10.67mm
Width
11.33mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDB33N25TM Description
FDB33N25TM is a 250V N-Channel Power MOSFET. UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET FDB33N25TM is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The onsemi FDB33N25TM is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.

FDB33N25TM Features
RDS(on) = 94m? ( Max.)@ VGS = 10V, ID = 16.5A
Low gate charge ( Typ. 36.8nC)
Low Crss ( Typ. 39pF)
100% avalanche tested

FDB33N25TM Applications
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
ATX and electronic lamp ballasts

FDB33N25TM More Descriptions

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK
Transistor, MOSFET, N-channel, high voltage, 250V, 33A, 94mOhm at 10V, D2PAK | ON Semiconductor FDB33N25TM
Trans MOSFET N-CH 250V 33A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Single N-Channel 250 V 235 W 48 nC Silicon Surface Mount Mosfet - TO-263-3
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDB33N25TM.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Terminal Finish

Avalanche Energy Rating (Eas)

View Compare
FDB33N25TM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 19 hours ago)

7 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

2004

e3

yes

Active

1 (Unlimited)

2

EAR99

94MOhm

FAST SWITCHING, AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

R-PSSO-G2

1

235W Tc

Single

ENHANCEMENT MODE

235W

DRAIN

35 ns

N-Channel

SWITCHING

94m Ω @ 16.5A, 10V

5V @ 250μA

2135pF @ 25V

33A Tc

48nC @ 10V

230ns

10V

±30V

120 ns

75 ns

33A

3V

30V

250V

3 V

4.83mm

10.67mm

11.33mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDB3860

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.1W Ta 71W Tc

-

-

-

-

-

N-Channel

-

37m Ω @ 5.9A, 10V

4.5V @ 250μA

1740pF @ 50V

6.4A Ta 30A Tc

30nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NOT SPECIFIED

compliant

NOT SPECIFIED

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB33N25TM vs FDB3860
FDB3632_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D²PAK (TO-263AB)

Automotive, AEC-Q101, PowerTrench®

9 mOhm @ 80A, 10V

310W (Tc)

Original-Reel®

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 175°C (TJ)

Surface Mount

6000pF @ 25V

110nC @ 10V

N-Channel

-

10V

100V

12A (Ta)

-

-

FDB33N25TM vs FDB3632_F085
FDB38N30U

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 21 hours ago)

8 Weeks

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

2013

e3

yes

Active

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

R-PSSO-G2

1

313W Tc

Single

ENHANCEMENT MODE

313W

DRAIN

33 ns

N-Channel

SWITCHING

120m Ω @ 19A, 10V

5V @ 250μA

3340pF @ 25V

38A Tc

73nC @ 10V

80ns

10V

±30V

62 ns

133 ns

38A

-

30V

300V

-

4.83mm

10.67mm

9.65mm

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Tin (Sn)

722 mJ

FDB33N25TM vs FDB38N30U