Fairchild/ON Semiconductor FCD380N60E

Name: FCD380N60E
Brand: Fairchild/ON Semiconductor
SKU: 2484320-FCD380N60E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FCD380N60E

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484320-FCD380N60E

Description:: MOSFET N CH 600V 10.2A DPAK

ECAD Model:

Datasheet:: FCD380N60E

Specifications

Fairchild/ON Semiconductor FCD380N60E technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCD380N60E.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Series
SuperFET® II
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FCD380N60
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
106W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
106W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10.2A Tc
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Rise Time
9ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
64 ns
Continuous Drain Current (ID)
10.2A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
650V
Avalanche Energy Rating (Eas)
211.6 mJ
Height
2.39mm
Length
6.73mm
Width
6.22mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FCD380N60E Description
FCD380N60E is an N-Channel SUPERFET? II Power MOSFET manufactured by onsemi. The onsemi FCD380N60E utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. The FCD380N60E is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET FCD380N60E is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

FCD380N60E Features
650 V at TJ = 150°C
100% Avalanche Tested
Max. RDS(on) = 380 mΩ
Ultra-Low Gate Charge ( Typ. Qg = 34 nC )
Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF )

FCD380N60E Applications
PFC
Server/telecom power
FPD TV power
ATX power
Industrial power applications

FCD380N60E More Descriptions

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Product that comes on tape, but is not reeled
MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5
Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Certification